BD250C 45V 125W PNP TO-3PN Bipolar Transistor BJT

Description

BD250C PNP Bipolar Transistor for High Power Switching Features: High Collector Current: Capable of handling up to 25 A of continuous collector current, suitable for demanding power applications. Power Dissipation: Designed to dissipate up to 125 W at a case temperature of 25°C, ensuring reliable operation under substantial power loads. Package Type: Housed in a TO-3PN package, the BD250C offers robust thermal performance and ease of mounting. Specifications: Type Designator: BD250C Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 125 W Maximum Collector-Emitter Voltage |Vcer| ((RBE= 100Ω): 115 V Maximum Collector-Emitter Voltage |Vceo|: 100 V Maximum Emitter-Base Voltage |Veb|: 5 V Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current-Continuous |Ic max|: 25A Maximum Collector Current |Ic max|: 40 A Max. Operating Junction Temperature (Tj): 150 °C Applications: Power Amplifiers: Ideal for use in audio and RF power amplification circuits where high current handling is essential. Switching Regulators: Suitable for power regulation applications requiring efficient switching and high current capacity. Motor Drivers: Effective in driving motors in industrial and automotive applications due to its high current capability. Document: BD250C Datasheet

From the supplier's page.