
2SC5252 NPN Transistor TO-3P
EGP 20
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2SC5252 NPN Transistor TO-3P The 2SC5252 NPN Transistor TO-3P is a high-power silicon NPN bipolar junction transistor designed for high-voltage switching and power control applications. Developed using triple diffused planar technology, this transistor provides reliable electrical performance and high breakdown voltage, making it suitable for demanding electronic systems. Features: High-voltage silicon NPN power transistor. Collector-emitter voltage up to 800V. Collector-base voltage up to 1500V. Continuous collector current up to 15A. High power dissipation capability up to 50W. High-speed switching performance. Specifications: Parameter Value Collector-Base Voltage: 1500V Collector-Emitter Voltage: 800V Emitter-Base Voltage: 6V Collector Current: 15A Collector Peak Current: 30A Power Dissipation: 50W Saturation Voltage: 5V max Fall Time: 0.15µs typ Junction Temperature: 150°C Operating Temperature: -55°C to +150°C Package: TO-3P Pin Configurations: Applications: Horizontal deflection output in CRT character displays. High-voltage switching circuits in legacy monitors and televisions. Power supply and deflection stages in industrial equipment. General high-voltage amplification and switching designs. CRT-based display driver applications. Pulse and high-energy switching circuits. Package Include: 1x 2SC52-52 NPN Transistor TO-3P Datasheet
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