2SC4793 NPN BJT Transistor 230V 1A TO-220F
EGP 20
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2SC4793 NPN BJT Transistor 230V 1A TO-220F The 2SC4793 is a silicon NPN epitaxial transistor designed by Toshiba for power amplifier and driver-stage amplifier applications. It features a 230V collector-emitter voltage rating, a 1A maximum collector current, and a typical transition frequency of 100MHz, making it suitable for demanding amplifier circuits that require high voltage capability and good high-frequency performance. It is also specified as complementary to the 2SA1837 transistor. The transistor provides a DC current gain range of 100 to 320 under the specified test conditions and a maximum collector power dissipation of 20W at a case temperature of 25°C. It is intended primarily for power amplification and driver-stage applications and is available in a leaded power package suitable for through-hole mounting. Features: NPN silicon epitaxial transistor. High-voltage transistor design. Suitable for power amplifier circuits. Suitable for driver-stage amplifier circuits. High transition frequency. Complementary transistor to 2SA1837. Through-hole power transistor construction. Suitable for linear amplification applications. Good high-voltage capability. Specifications: Product Attribute Attribute Value Datasheet 2SC4793 Product Category Bipolar Transistors – BJT Technolog Si Model 2SC4793 Configuration Single Transistor Polarity NPN Package/Case TO-220F Mounting Style Through Hole Number of terminals 3 Current – Collector (Ic) (Max) 1 A Voltage – Collector Emitter Breakdown (Max) 230 V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current – Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V Power – Max 2 W Operating Temperature 150°C (TJ) Storage Temperature Range (Tstg) -55 °C to +150 °C Pinout: Applications: Audio amplifier stages. High power audio amplifiers. Motor Driver Applications. Radio and RF Applications. Drive load of up to 1A. Package Includes: 2SC4793 NPN BJT Transistor 230V 1A TO-220F. Datasheet: 2SC4793.
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