Silan 50T65FD1 IGBT with Fast Recovery Diode 650V 50A TO-3P

Description

Silan 50T65FD1 IGBT with Fast Recovery Diode 650V 50A TO-3P The SGT50T65FD1PN is a 650V, 50A field stop IGBT with a co-packaged fast recovery diode (FRD), manufactured using advanced Field Stop IV IGBT technology . Housed in a 3-pin TO-3P package, it offers optimum performance for induction heating, UPS, SMPS and PFC applications. The device combines low conduction loss — a typical collector-emitter saturation voltage of only 2.2V at IC = 50A — with fast switching (recommended operating frequency of 10–60 kHz) and high input impedance . The integrated fast recovery diode features a typical forward voltage of 1.95V at IF = 25A and a typical reverse recovery time of just 33ns. Features 50A, 650V ratings — VCE(sat) (typ.) = 2.2V @ IC = 50A Field Stop IV IGBT technology Low conduction loss Fast switching — recommended frequency: 10–60 kHz High input impedance Co-packaged fast recovery diode (trr = 33ns typ., Qrr = 65nC typ.) High current capability: IC = 100A @ TC = 25°C; pulsed ICM = 150A Power dissipation up to 235W @ TC = 25°C Wide operating junction & storage temperature range: −55°C to +150°C Specifications 1 – Product Identification Parameter Symbol Value / Rating Conditions / Notes Part Number – SGT50T65FD1PN — Marking Code – 50T65FD1 — Package – TO-3P — Integrated Diode – Fast Recovery Diode (FRD) — 2 – Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Collector to Emitter Voltage VCE 650 V – Gate to Emitter Voltage VGE ±20 V – Transient G-E Voltage VGEM ±30 V – Collector Current IC 100 A TC = 25°C Collector Current IC 50 A TC = 100°C Pulsed Collector Current ICM 150 A – Diode Current IF 25 A – Power Dissipation PD 235 W TC = 25°C Operating Junction Temperature TJ -55 to +150 °C – Storage Temperature Tstg -55 to +150 °C – 3 – Thermal Characteristics Thermal Resistance, Junction to Case (IGBT) RθJC 0.53 °C/W – Thermal Resistance, Junction to Case (FRD) RθJC 1.48 °C/W – 4 – Electrical Characteristics – IGBT (TC = 25°C unless otherwise noted) Collector to Emitter Breakdown Voltage BVCE 650 V (min.) VGE = 0 V, IC = 250 µA C-E Leakage Current ICES 200 µA (max.) VCE = 650 V, VGE = 0 V G-E Leakage Current IGES ±400 nA (max.) VGE = 20 V, VCE = 0 V G-E Threshold Voltage VGE(th) 4.0 / 5.0 / 6.5 V (min./typ./max.) IC = 250 µA, VCE = VGE Collector to Emitter Saturation Voltage VCE(sat) 2.2 V (typ.) / 2.6 V (max.) IC = 50 A, VGE = 15 V, TC = 25°C Collector to Emitter Saturation Voltage VCE(sat) 2.4 V (typ.) IC = 50 A, VGE = 15 V, TC = 125°C Input Capacitance Cies 4532 pF (typ.) VCE = 30 V, VGE = 0 V, f = 1 MHz Output Capacitance Coes 90 pF (typ.) VCE = 30 V, VGE = 0 V, f = 1 MHz Reverse Transfer Capacitance Cres 41 pF (typ.) VCE = 30 V, VGE = 0 V, f = 1 MHz 5 – Switching Characteristics – IGBT (VCE = 400 V, IC = 50 A, Rg = 10 Ω, VGE = 15 V, Inductive Load) Turn-On Delay Time Td(on) 45 ns (typ.) – Rise Time Tr 145 ns (typ.) – Turn-Off Delay Time Td(off) 125 ns (typ.) – Fall Time Tf 130 ns (typ.) – Turn-On Switching Loss Eon 2.8 mJ (typ.) – Turn-Off Switching Loss Eoff 1.0 mJ (typ.) – Total Switching Loss Est 3.8 mJ (typ.) – Total Gate Charge Qg 145 nC (typ.) VCE = 400 V, IC = 50 A, VGE = 15 V Gate to Emitter Charge Qge 48 nC (typ.) VCE = 400 V, IC = 50 A, VGE = 15 V Gate to Collector Charge Qgc 46 nC (typ.) VCE = 400 V, IC = 50 A, VGE = 15 V 6 – Electrical Characteristics – Fast Recovery Diode (TC = 25°C unless otherwise noted) Diode Forward Voltage VFM 1.95 V (typ.) IF = 25 A, TC = 25°C Diode Forward Voltage VFM 1.7 V (typ.) IF = 25 A, TC = 125°C Diode Reverse Recovery Time Trr 33 ns (typ.) IEC = 25 A, dIEC/dt = 200 A/µs Diode Reverse Recovery Charge Qrr 65 nC (typ.) IEC = 25 A, dIEC/dt = 200 A/µs Applications Induction heating Uninterruptible power supplies (UPS) Switched-mode power supplies (SMPS) Power factor correction (PFC) Package Content 1 x Silan 50T65FD1 IGBT with Fast Recovery Diode 650V 50A TO-3P DataSheet 50T65FD1

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