FS10SM N-Channel Power MOSFET Transistor TO-3P

Description

FS10SM N-Channel Power MOSFET Transistor TO-3P The FS10SM-18A N-Channel Power MOSFET Transistor TO-3P, manufactured by Mitsubishi, is a high-performance semiconductor device designed for high-speed switching applications. This N-channel MOSFET offers a robust drain-source voltage rating of 900V and a continuous drain current of 10A, making it an ideal choice for demanding power management tasks. Encased in a TO-3P package, the transistor ensures efficient heat dissipation and reliable operation across a wide temperature range from -55°C to +150°C. With a maximum power dissipation of 200W, this component is engineered to handle significant electrical stress while maintaining stability. Features: High-speed switching capability for efficient power management. Drain-source voltage rating of 900V for robust performance. Continuous drain current of 10A with a pulsed current of 30A. Low on-state resistance of 1.2Ω to minimize power loss. Operating temperature range from -55°C to +150°C. Specifications: Parameter Value Drain-source voltage 900V Gate-source voltage ±30V Drain current 10A Drain current (Pulsed) 30A Maximum power dissipation 200W Channel temperature -55~+150°C Storage temperature -55~+150°C On-state resistance 1.2Ω Input capacitance 2250pF Output capacitance 230pF Reverse transfer capacitance 42pF Turn-on delay time 38ns Rise time 46ns Turn-off delay time 260ns Fall time 75ns Thermal resistance 0.625°C/W Pin Configuration: Applications: Switch-mode power supplies (SMPS). DC-DC converters. Battery chargers. Power supplies for printers, copiers, and other consumer electronics. Package Include: 1x FS10SM N-Channel Power MOSFET Transistor TO-3P Datasheet: FS10SM

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