Toshiba 2SK2846 N-Channel MOSFET Transistor 600V 2A 2-8M1B

Description

Toshiba 2SK2846 N-Channel MOSFET Transistor 600V 2A 2-8M1B The 2SK2846 is a high-performance, silicon N-channel MOS type field effect transistor . It features an advanced enhancement-mode structure designed to handle a maximum drain-source voltage of 600V and a continuous DC drain current of up to 2A . This transistor is highly efficient and optimized for power management and switching environments . Features Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode Specifications Absolute Maximum Ratings ( Ta = 25°C ) Characteristic Symbol Rating Unit Drain-Source Voltage V DSS 600 V Drain-Gate Voltage ( R GS = 20 kΩ ) V DGR 600 V Gate-Source Voltage V GSS ±30 V Drain Current (DC) (Note 1) I D 2 A Drain Current (Pulse, t = 1 ms ) (Note 1) I DP 5 A Drain Current (Pulse, t = 100 μs ) (Note 1) I DF 8 A Drain Power Dissipation P D 1.3 W Single Pulse Avalanche Energy (Note 2) E AS 93 mJ Avalanche Current I AR 2 A Repetitive Avalanche Energy (Note 3) E AR 0.13 mJ Channel Temperature T ch 150 °C Storage Temperature Range T stg -55 ~ 150 °C Thermal Characteristics Characteristic Symbol Max Unit Thermal Resistance, Channel to Ambient R th(ch-a) 96.1 °C/W Electrical Characteristics ( Ta = 25°C ) Characteristic Symbol Test Condition Min Typ. Max Unit Gate Leakage Current I GSS V GS = ±25 V, V DS = 0 V — — ±10 μA Gate-Source Breakdown Voltage V (BR)GSS I D = ±10 μA, V GS = 0 V ±30 — — V Drain Cut-off Current I DSS V DS = 600 V, V GS = 0 V — — 100 μA Drain-Source Breakdown Voltage V (BR)DSS I D = 10 mA, V GS = 0 V 600 — — V Gate Threshold Voltage V th V DS = 10 V, I D = 1 mA 2.0 — 4.0 V Drain-Source ON Resistance R DS(ON) V GS = 10 V, I D = 1 A — 4.2 5.0 Ω Forward Transfer Admittance |Y fs | V DS = 10 V, I D = 1 A 0.8 1.7 — S Input Capacitance C iss V DS = 10 V, V GS = 0 V, f = 1 MHz — 380 — pF Reverse Transfer Capacitance C rss — 40 — pF Output Capacitance C oss — 120 — pF Rise Time t r V DD ≈ 200 V, I D = 1 A, R L = 200 Ω, V GS = 10 V, Duty ≤ 1%, t w = 10 μs — 15 — ns Turn-on Time t on — 25 — ns Fall Time t f — 20 — ns Turn-off Time t off — 80 — ns Total Gate Charge Q g V DD ≈ 480 V, V GS = 10 V, I D = 2 A — 9 — nC Gate-Source Charge Q gs — 5 — nC Gate-Drain (“Miller”) Charge Q gd — 4 — nC Source-Drain Diode Ratings and Characteristics ( Ta = 25°C ) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous Drain Reverse Current I DR — — — 2 A Pulse Drain Reverse Current ( t = 1 ms ) I DRP — — — 5 A Pulse Drain Reverse Current ( t = 100 μs ) I DRP — — — 8 A Forward Voltage (Diode) V DSF I DR = 2 A, V GS = 0 V — — -1.5 V Reverse Recovery Time t rr I DR = 2 A, V GS = 0 V, dI DR /dt = 100 A/μs — 1000 — ns Reverse Recovery Charge Q rr — 3.5 — μC Applications Chopper Regulators DC-DC Converters Motor Drive Applications General power switching in computer, office, industrial, and domestic appliances Package Content 1 x Toshiba 2SK2846 N-Channel MOSFET Transistor 600V 2A 2-8M1B DataSheet 2SK2846

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