TOSHIBA 2SK890 Transistor TO-220

Description

TOSHIBA 2SK890 Transistor TO-220 The TOSHIBA 2SK890 is an N-channel silicon MOSFET transistor housed in a robust TO-220 package, engineered under Toshiba’s “Power MOS II” series for industrial-grade reliability. It targets demanding environments where efficiency and durability are paramount, leveraging enhancement-mode technology to simplify integration. The device emphasizes user-friendliness in high-stress applications, with intrinsic safeguards against common failure modes like electrostatic discharge (ESD), thanks to its MOS structure. Designed for seamless thermal management, the TO-220 package incorporates a metal tab for direct heat-sink mounting, optimizing heat dissipation during high-power operations. Its vertical silicon construction ensures stable current handling and minimal energy loss, making it adaptable to fluctuating industrial loads. The transistor’s architecture prioritizes low leakage and responsive switching behavior, enabling consistent operation without external compensation circuits. The 2SK890 excels in dynamic power control scenarios, balancing rapid switching with electrical stability. Its enhancement-mode design allows precise gate-voltage modulation, reducing drive complexity. Toshiba’s focus on ruggedness ensures resilience in temperature-variable settings, supporting sustained performance in systems where thermal cycling is frequent. Features: Low on-resistance enhancing energy efficiency. High forward transfer admittance for superior signal response. Low leakage current minimizing standby losses. Enhancement-mode type for simplified drive requirements. Integrated source-drain diode for reverse-current protection. Optimized thermal design with TO-220 heat-dissipation tab. Static electricity-sensitive MOS structure (requires careful handling). Specifications: Parameter Symbol Min Typ Max Unit Conditions Max Ratings Drain-Source Voltage VDSS – – 200 V Gate-Source Voltage VGSS – – ±20 V Drain Current (Continuous) ID – – 10 A Drain Current (Pulse) IDP – – 40 A Power Dissipation Pch – – 75 W Tc=25°C Electrical Characteristics Gate Threshold Voltage Vth 1.5 – 3.5 V VDS=10V, ID=1mA Drain-Source On-Resistance RDS(on) – 0.25 0.40 Ω VGS=10V, ID=5A Forward Transfer Admittance |Yfs| 3.0 4.8 – S VDS=10V, ID=5A Total Gate Charge Qg – 22 30 nC VDD=160V, VGS=10V, ID=9A Turn-On Delay Time t_d(on) – 32 80 ns VGS=10V Thermal Resistance Channel-to-Case Rth(ch-c) – – 1.67 °C/W Applications: High-Speed, High-Current Switching Circuits. Switching Regulators and DC-DC Converters. Motor Drive Systems. Package Contents: 1x TOSHIBA 2SK890 Transistor TO-220 Datasheet

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