G40N60UFD IGBT Transistor 600V 40A 160W TO-3P

Description

G40N60UFD IGBT Transistor 600V 40A 160W TO-3P The G40N60UFD IGBT Transistor 600V 40A 160W TO-3P is an ultrafast Insulated Gate Bipolar Transistor designed for high-speed power switching applications. The supplied datasheet identifies the corresponding device as FGA40N60UFD and specifies a 600V collector-emitter voltage rating, 40A continuous collector current at a case temperature of 25°C, and 160W maximum power dissipation at 25°C. Features: Fast Switching. Low VCE(sat). Positive temperature coefficient. Fast recovery anti-parallel diode. Specifications: Parameter Value Device Type Ultrafast IGBT. Collector-Emitter Voltage (VCES) 600V. Gate-Emitter Voltage (VGES) ±20V. Collector Current (IC) at TC=25°C 40A. Collector Current (IC) at TC=100°C 20A. Pulsed Collector Current (ICM) 160A. Diode Continuous Forward Current (IF) at TC=100°C 15A. Diode Maximum Forward Current (IFM) 160A. Maximum Power Dissipation at TC=25°C 160W. Maximum Power Dissipation at TC=100°C 64W. Operating Junction Temperature -55°C to +150°C. Storage Temperature -55°C to +150°C. VGE Threshold Voltage 3.5V to 6.5V. VCE(sat) at IC=20A 2.3Vtyp., 3.0Vmax. VCE(sat) at IC=40A 3.1Vtyp. Input Capacitance (Cies) 1075pFtyp. Output Capacitance (Coes) 170pFtyp. Reverse Transfer Capacitance (Cres) 50pFtyp. Total Gate Charge (Qg) 77nCtyp., 150nCmax. Gate-Emitter Charge (Qge) 20nCtyp., 30nCmax. Gate-Collector Charge (Qgc) 25nCtyp., 40nCmax. Diode Forward Voltage (VFM) 1.4Vtyp. at IF=15A. Diode Reverse-Recovery Time (trr) 50nstyp., 95nsmax. Thermal Resistance Junction-to-Case, IGBT 0.77°C/W. Thermal Resistance Junction-to-Case, Diode 1.7°C/W. Package TO-3P. Mounting Type Through-hole. Pin Configuration: Applications: Welding converters UPS Boost Chopper Air condition Datasheet: G40N60UFD

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