G40N60FUK IGBT Transistor 600V 80A 298W TO-247

Description

G40N60FUK IGBT Transistor 600V 80A 298W TO-247 The G40N60FUK is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for efficient power switching and amplification applications. It operates with a collector-emitter voltage of up to 600V and supports a continuous collector current of 80A, making it ideal for medium to high-power industrial and consumer electronics. With a power dissipation capability of 298W, this transistor ensures excellent thermal performance and durability, especially when mounted on an appropriate heatsink. Encased in a TO-247 package, the G40N60FUK offers robust mechanical reliability and ease of mounting, suitable for demanding environments such as motor drives, induction heating systems, inverters, SMPS (Switched-Mode Power Supplies), and UPS (Uninterruptible Power Supply) systems. The device combines the advantages of low conduction loss, fast switching speeds, and high input impedance, thanks to the integration of MOSFET and bipolar transistor characteristics inherent in IGBT technology. This makes the G40N60FUK an efficient and reliable choice for applications requiring high power density and thermal efficiency. Features: Fast Switching. Low VCE(sat). Positive temperature coefficient. Fast recovery anti-parallel diode. Pin Configuration: Specifications: Type Description Category Transistors IGBTs Single IGBTs Voltage – Collector Emitter Breakdown (Max) 600 V Current – Collector (Ic) (Max) 80 A Current – Collector Pulsed (Icm) 160 A Vce(on) (Max) @ Vge, Ic (TJ=25℃) 1.95V @ 15V, 40A Power – Max 298 W Input Type Standard Gate Charge 110 nC Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Applications: Welding converters UPS Boost Chopper Air condition Datasheet: G40N60FUK

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