MD60N30 60A 300V N-Channel MOSFET TO-3P

Description

MD60N30 60A 300V N-Channel MOSFET TO-3P The MD60N30 60A 300V N-Channel MOSFET TO-3P is a high-performance power transistor designed for efficient switching and power management applications. Based on advanced high-voltage MOSFET technology, this device delivers excellent electrical performance, low conduction losses, and high reliability in demanding environments. Features: N-channel enhancement mode MOSFET. High drain-source voltage rating of 300V. Continuous drain current up to 60A. Low RDS(on) for reduced conduction losses. Fast switching characteristics for high efficiency. Specifications: Parameter Value Drain-Source Voltage 300V Gate-Source Voltage ±30V Continuous Drain Current (T_C=25°C) 60A Continuous Drain Current (T_C=100°C) 40A Pulsed Drain Current 200A Static Drain-Source On-Resistance 0.042Ω typ / 0.056Ω max Gate Threshold Voltage 2.9V to 4.1V Input Capacitance 4438pF typ Power Dissipation 658W Junction Temperature Range -55°C to +150°C Package TO-3P Pin Configuration: Applications: Switch mode power supplies and adapters. DC-DC converters and high-frequency inverters. Motor control circuits and industrial power systems. Battery chargers and uninterruptible power supplies. Solar inverters and welding equipment. High-efficiency offline AC-DC power designs. Package Include: 1x MD60N-30 60A 300V N-Channel MOSFET TO-3P. Datasheet: MD60N30

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