STF24N60M2 N-Channel MOSFET Transistor 600V 18A TO-220FP
EGP 25
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STF24N60M2 N-Channel MOSFET Transistor 600V 18A TO-220FP The STF24N60M2 is an N-channel Power MOSFET developed using MDmesh M2 technology. Its strip layout and improved vertical structure provide low on-resistance and optimized switching characteristics, making it ideal for demanding high-efficiency converters. Features Extremely low gate charge Excellent output capacitance profile 100% avalanche tested Zener-protected VDS @ TJmax: 650 V RDS(on) max: 190 mΩ ID: 18 A Specifications Absolute Maximum Ratings Symbol Parameter Value Unit Vgs Gate-source voltage ±25 V Id (1) Drain current (continuous) at Tc = 25 °C 18 A Id (1) Drain current (continuous) at Tc = 100 °C 12 A IdM (2) Drain current (pulsed) 72 A PTOT Total power dissipation at Tc = 25 °C 30 W dv/dt (3) Peak diode recovery voltage slope 15 V/ns dv/dt (4) MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25 °C) 2.5 kV Tstg Storage temperature range -55 to 150 °C Tj Operating junction temperature range -55 to 150 °C Applications Switching applications LCC converters Resonant converters DataSheet STF24N60M2
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