
CNY75GB Optocouplers Phototransistor Output 70V 50mA DIP-6
EGP 10
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CNY75GB Optocouplers Phototransistor Output 70V 50mA DIP-6 The CNY75GB Optocoupler is a high‑isolation device integrating a gallium‑arsenide infrared LED and a phototransistor in a 6‑pin DIP package. It provides reinforced insulation up to 5000 Vrms and supports collector‑emitter voltages to 70 V. With a current transfer ratio of 100 %–200 % at 10 mA LED drive and a low saturation voltage of 0.3 V (IF = 10 mA, IC = 1 mA), it delivers reliable signal transmission and fast switching for industrial and consumer applications. Features Isolation materials according to UL 94-VO Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664) Climatic classification 55/110/21 (IEC 60068 part 1) Low temperature coefficient of CTR CTR offered in 3 groups Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) Rated recurring peak voltage (repetitive) VIORM = 600 VRMS Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV Creepage current resistance according to VDE 0303/IEC 60112 comparative racking index: CTI ≥ 325 Thickness through insulation ≥ 0.4 mm Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Specifications Parameter Value Category Optocoupler/LED/Digital Tube/Photoelectric Device/Optocouplers – Phototransistor Output Receiving End Voltage 70V Isolation Voltage(rms) 5000V Operating Temperature -55℃~+110℃ Fall time – Output Current 50mA Rise time – Collector-Emitter Saturation Voltage (Vce(sat)@Ic,IF) 0.3V@1mA,10mA Number of Outputs 1 Reverse Voltage 5V Forward Voltage 1.25V Output Type Phototransistor Input voltage type DC Dimensions Applications Switch-mode power supplies Line receiver Computer peripheral interface Microprocessor system interface Circuits for safe protective separation against electrical shock Datasheet CNY75GB Optocoupler .
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