FQA80N60 N-Channel MOSFET TO-3P 600V 80A
EGP 90
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Power Efficiency: FQA80N60 N-Channel MOSFET for High-Performance Switching Features: High-Speed Switching: Enables rapid operation with minimal energy loss. Low Gate Charge: 250nC, facilitating efficient drive requirements. Low On-Resistance: Ensures efficient conduction with minimal power loss. High Input Impedance: Simplifies drive requirements. TO-3P Package: Provides robust construction and efficient heat dissipation. Specifications Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package/Case: TO-3P Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds – Drain-Source Breakdown Voltage: 600 V Id – Continuous Drain Current: 80 A Vgs – Gate-Source Voltage: – 20 V, + 20 V Vgs th – Gate-Source Threshold Voltage: 4.5 V Qg – Gate Charge: 250 nC Minimum Operating Temperature: – 55 C Maximum Operating Temperature: + 150 C Pd – Power Dissipation: 195 W Channel Mode: Enhancement Configuration: Single Rise Time: 50 ns Transistor Type: 1 N-Channel Applications: Power supplies Motor controls DC-DC converters Inverters Audio amplifiers Document: Datasheet
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