MMBT3904LT1G 40V 40@0.1mA,1.0V 225mW 200mA NPN SOT-23 Bipolar Transistor SMD
EGP 2
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MMBT3904LT1G 40V 40@0.1mA,1.0V 225mW 200mA NPN SOT-23 Bipolar Transistor SMD The MMBT3904L-T1G is a high-performance NPN transistor designed for general-purpose switching and amplification applications. This component is housed in a compact SOT-23 package, making it ideal for space-constrained designs in automotive, consumer electronics, and industrial systems. With a collector-emitter voltage rating of 40V and a collector current of up to 200mA, the MMBT3904LT1G provides reliable performance even under moderate electrical stress. It features a low collector-emitter saturation voltage and a high current gain, making it suitable for low-power, low-noise applications that require precision switching and signal amplification. Features: NPN bipolar junction transistor in compact SOT-23 surface-mount package. Maximum collector-emitter voltage: 40V. Maximum continuous collector current: 200mA. Maximum power dissipation: 225mW. High current gain with low saturation voltage. Specifications: Parameter Value Collector-Emitter Voltage 40V Collector Current (Continuous) 200mA Saturation Voltage (VCE(sat)) 0.3V Gain (hFE) 40-300 Package Type SOT-23 Max Power Dissipation 225mW Operating Temperature -55°C to +150°C Base-Emitter Voltage 6.0V Pin Configuration: Footprint: Applications: General-purpose switching and amplification. Signal processing in audio and communication devices. Automotive electronics, especially for low-power signal switching. Consumer electronics such as radios and sensors. Compact electronic devices requiring efficient low-voltage operation. Datasheet: MMBT3904LT1G
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