2SK1941 N-Channel MOSFET Transistor 600V 16A TO-3PF

Description

2SK1941 N-Channel MOSFET Transistor 600V 16A TO-3PF The 2SK1941 is a high-performance N-Channel power MOSFET transistor designed for switching power supplies, industrial inverter systems, motor control circuits, and high-speed switching applications. The transistor is manufactured in a TO-3P package that provides excellent thermal dissipation and reliable high-power operation for through-hole electronic circuits and industrial power electronics systems. Features: High speed switching capability. Low drain-source on-state resistance for minimal conduction losses. No secondary breakdown mechanism ensures robust operation. Low driving power requirement. High voltage capability with 600V drain-source breakdown voltage. Gate-source voltage guaranteed to ±30V. Avalanche-proof design for enhanced ruggedness. Wide operating temperature range from -55°C to +150°C. Specifications: Parameter Value Transistor Type N-Channel MOSFET Drain-Source Voltage (VDSS) 600V Drain-Gate Voltage (VDGR) 600V (RGS=20kΩ) Gate-Source Voltage (VGSS) ±30V Continuous Drain Current (ID) 16A Pulsed Drain Current (ID(puls)) 64A Maximum Power Dissipation (PD) 100W Drain-Source On-State Resistance (RDS(on)) 0.37Ω (Typ.) / 0.55Ω (Max.) Drain-Source Breakdown Voltage (V(BR)DSS) 600V (Min.) Gate Threshold Voltage (VGS(th)) 2.5V (Min.) / 3.0V (Typ.) / 3.5V (Max.) Zero Gate Voltage Drain Current (IDSS) 10μA (Typ.) / 500μA (Max.) at Tch=25°C Zero Gate Voltage Drain Current (IDSS) 0.2mA (Typ.) / 1.0mA (Max.) at Tch=125°C Gate-Source Leakage Current (IGSS) 10nA (Typ.) / 100nA (Max.) Forward Transconductance (gfs) 9S (Min.) / 18S (Typ.) Input Capacitance (Ciss) 3300pF (Typ.) / 4950pF (Max.) Output Capacitance (Coss) 310pF (Typ.) / 470pF (Max.) Reverse Transfer Capacitance (Crss) 70pF (Typ.) / 110pF (Max.) Turn-On Delay Time (td(on)) 35ns (Typ.) / 55ns (Max.) Rise Time (tr) 70ns (Typ.) / 110ns (Max.) Turn-Off Delay Time (td(off)) 180ns (Typ.) / 270ns (Max.) Fall Time (tf) 100ns (Typ.) / 150ns (Max.) Avalanche Capability (IAV) 16A at L=100μH, Tch=25°C Continuous Reverse Drain Current (IDR) 16A Pulsed Reverse Drain Current (IDRM) 64A Diode Forward On-Voltage (VSD) 1.0V (Typ.) / 1.5V (Max.) Reverse Recovery Time (trr) 500ns (Typ.) Reverse Recovery Charge (Qrr) 4.0μC (Typ.) Thermal Resistance (Rth(ch-c)) 1.25°C/W Thermal Resistance (Rth(ch-a)) 30°C/W Storage Temperature Range -55°C to +150°C Channel Temperature (Tch) 150°C (Max.) Package Type TO-3PF Mounting Style Through-Hole Applications: Switching regulator designs. Uninterruptible power supply (UPS) systems. DC-DC converter circuits. General purpose power amplifier applications. High speed power switching. Power management systems. Package Include: 1x 2SK1941 N-Channel MOSFET Power Transistor. Datasheet

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