FGH50N60 N Channel MOSFET Transistor 600V 40A TO-220

Description

FGH50N60 N Channel MOSFET Transistor TO-220 The FGH50N60 is a high-performance power transistor designed for applications that require efficient switching, high current handling, and reliable operation under demanding conditions. Its robust construction allows it to operate in high-power circuits where fast switching and low power loss are essential. This transistor is widely used in industrial equipment, power conversion systems, uninterruptible power supplies, induction heating systems, and motor control applications. The TO-220 package provides a compact design while allowing efficient heat transfer when used with an appropriate heatsink. Features: High-speed switching performance. High current handling capability. Suitable for high-power applications. Excellent thermal characteristics. Optimized for power conversion circuits. Low conduction losses. Reliable switching operation. Through-hole package for easy installation. Suitable for industrial and commercial applications. Compatible with inverter and switching circuits. Specifications: Specification Value Device Type Field-Stop IGBT Transistor Configuration N-Channel Collector-Emitter Voltage (VCES) 600V Collector Current (IC) 50A Pulsed Collector Current 120A Gate-Emitter Voltage (VGES) ±20V Transient Gate-Emitter Voltage ±30V Power Dissipation 290W Gate Threshold Voltage 4.0V to 6.5V Collector-Emitter Saturation Voltage 1.8V Operating Junction Temperature -55°C to +150°C Package Type TO-220 Mounting Type Through-Hole Pinout: Pin Description 1 Gate 2 Collector 3 Emitter Applications: Solar inverters. Switching power supplies. UPS systems. Motor drives. Welding equipment. Power factor correction circuits. Industrial automation equipment. Induction heating systems. Energy storage systems. High-power DC-AC conversion. Package Includes: 1x FGH50N60 N Channel MOSFET Transistor TO-220. Documents: FGH50N60 Datasheet.

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