BUZ325 N-Channel MOSFET 400V 12.5A TO-218AA
EGP 210
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BUZ325 N-Channel MOSFET 400V 12.5A TO-218AA The BUZ325 is a high-performance N-Channel MOSFET designed for high-voltage switching applications. Featuring a voltage rating of 400V and a maximum continuous drain current of 12.5A, the BUZ325 is ideal for use in power management, amplification, and digital switching circuits. This MOSFET comes in a TO-218AA package, making it suitable for various industrial and automotive applications where high reliability and performance are critical. Features: High voltage rating of 400V. Maximum drain current of 12.5A. Low on-resistance for improved efficiency. Fast switching speed for high-performance applications. TO-218AA package for efficient heat dissipation. Specifications: Parameter Value Drain-source breakdown voltage 400V Continuous drain current 12.5A Pulsed drain current 50A Avalanche energy single pulse 670mJ Gate-source voltage ±20V Power dissipation 125W Drain-source on-resistance 0.35Ω Thermal resistance junction-to-case 1.0K/W Operating temperature range -55°C to 150°C Package TO-218AA Manufacturer Siemens Pin Configuration: Applications: High-efficiency DC-DC converters and switching regulators. Motor control and inverter circuits. Uninterruptible power supplies and welding equipment. Industrial power switching and automation systems. Automotive electronic control units. Solar inverters and renewable energy converters. Package Include: 1x BUZ325 N-Channel MOSFET 400V 12.5A TO-218AA.
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