IRF830
IRF830 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220
EGP 20
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IRF830 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220 TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. Package Includes: 1x IRF830 Documents : IRF830 Datasheet Related Products: Transistors
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