2SK3294 N-Channel MOSFET Transistor 250V 20A TO-220

Description

2SK3294 N-Channel MOSFET Transistor 250V 20A TO-220 The 2SK3294 is an N-channel MOS FIELD EFFECT TRANSISTOR designed specifically for high-voltage switching applications . It features exceptionally low on-state resistance alongside excellent switching characteristics . The device includes an internal gate protection diode structure that serves as a protector against electrostatic discharge . Features Low On-State Resistance Low Input Capacitance High Gate Voltage Rating Avalanche Capability Rated Built-in Gate Protection Diode Specifications Absolute Maximum Ratings ( T A = 25°C unless otherwise specified) Rating Parameters Symbol Value Unit Drain to Source Voltage ( V GS = 0 V ) V DSS 250 V Gate to Source Voltage ( V DS = 0 V ) V GSS ±30 V Drain Current (DC) ( T C = 25°C ) I D(DC) ±20 A Drain Current (Pulse) Note 1 I D(pulse) ±60 A Total Power Dissipation ( T C = 25°C ) P T1 100 W Total Power Dissipation ( T A = 25°C ) P T2 1.5 W Channel Temperature T ch 150 °C Storage Temperature T stg -55 to +150 °C Single Avalanche Current Note 2 I AS 20 A Single Avalanche Energy Note 2 E AS 150 mJ Electrical Characteristics ( T A = 25°C ) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current I DSS V DS = 250 V, V GS = 0 V 100 μA Gate Leakage Current I GSS V GS = ±30 V, V DS = 0 V ±10 μA Gate Cut-off Voltage V GS(off) V DS = 10 V, I D = 1 mA 2.5 4.5 V Forward Transfer Admittance |y fs | V DS = 10 V, I D = 10 A 6.0 S Drain to Source On-state Resistance R DS(on) V GS = 10 V, I D = 10 A 120 160 mΩ Input Capacitance C iss V DS = 10 V, V GS = 0 V, f = 1 MHz 1500 pF Output Capacitance C oss 360 pF Reverse Transfer Capacitance C rss 220 pF Turn-on Delay Time t d(on) V DD = 125 V, I D = 10 A, V GS = 10 V, R G = 10 Ω 24 ns Rise Time t r 78 ns Turn-off Delay Time t d(off) 110 ns Fall Time t f 60 ns Total Gate Charge Q G V DD = 200 V, V GS = 10 V, I D = 20 A 57 nC Gate to Source Charge Q GS 8 nC Gate to Drain Charge Q GD 36 nC Body Diode Forward Voltage V F(S-D) I F = 20 A, V GS = 0 V 1.0 V Reverse Recovery Time t rr I F = 20 A, V GS = 0 V, di/dt = 50 A/μs 340 ns Reverse Recovery Charge Q rr 2.1 μC Applications DC/DC Converter systems Actuator Drivers General switching circuits in consumer and industrial equipment Package Content 1 x 2SK3294 N-Channel MOSFET Transistor 250V 20A TO-220 DataSheet 2SK3294

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