2SK2717 N-Channel MOSFET Transistor 900V 5A TO-220FP

Description

2SK2717 N-Channel MOSFET Transistor 900V 5A TO-220FP The 2SK2717 is a high-voltage N-channel power MOSFET designed for demanding switching applications such as DC-DC converters, motor drives, and power supplies. With a 900V drain-source voltage rating and 5A continuous drain current, it is ideal for circuits requiring high voltage tolerance and reliable performance. This device features low on-resistance (≈2.3–2.5Ω) and fast switching characteristics, ensuring efficient operation with reduced power loss. The TO-220FP (fully insulated package) provides excellent thermal performance while simplifying mounting without the need for additional insulation, making it suitable for compact and high-voltage designs. Features Low drain−source ON-resistance : R DS (ON) = 2.3 Ω (typ.) High forward transfer admittance : |Y fs | = 4.4 S (typ.) Low leakage current : I DSS = 100 μA (max) (V DS = 720 V) Enhancement mode : V th = 2.0 to 4.0 V (V DS = 10 V, I D = 1 mA) Specifications Absolute Maximum Ratings (T a = 25°C) Characteristics Symbol Rating Unit Drain–source voltage V DSS 900 V Drain–gate voltage (R GS = 20 kΩ) V DGR 900 V Gate–source voltage V GSS ±30 V Drain current I D 5 (DC) A I DP 15 (Pulse) Drain power dissipation (T C = 25°C) P D 45 W Single pulse avalanche energy E AS 595 mJ Avalanche current I AR 5 A Repetitive avalanche energy E AR 4.5 mJ Channel temperature T ch 150 °C Storage temperature range T stg -55 to 150 °C Applications Switching power supplies (SMPS). DC-DC converters and power regulators. Motor drive and control circuits. High-voltage switching applications. Industrial and consumer power electronics. Documents Datasheet 2SK2717

From the supplier's page.