IRFB3206 N-Channel MOSFET Transistor

Description

IRFB3206 N-Channel MOSFET Transistor The IRFB3206 N-Channel MOSFET Transistor is a high-performance power device optimized for efficient switching in advanced electronic systems. As an N-channel enhancement-mode MOSFET, it regulates current flow between drain and source through gate voltage application, providing exceptional power handling with a 60V drain-source breakdown voltage. This allows it to manage continuous drain currents up to 210A silicon-limited at 25°C case temperature, dropping to 150A at 100°C, while package limitations cap it at 120A for reliable operation in high-current scenarios. The ultra-low static drain-source on-resistance of 2.4mΩ typical and 3.0mΩ maximum at 10V gate-source voltage and 75A drain current significantly reduces conduction losses, enhancing overall system efficiency in power-intensive applications. Features: Ultra-low on-resistance of 3.0mΩ maximum for minimized conduction losses. High current rating of 210A silicon-limited for power-dense applications. Enhanced avalanche and dv/dt ruggedness for transient protection. Fast switching speeds with low gate charge for high-frequency efficiency. Specifications: Parameter Value Maximum Drain-Source Voltage 60 V Maximum Continuous Drain Current (25°C) 210 A Typical Drain-Source On-Resistance 2.4 mΩ Gate Threshold Voltage 2.0 to 4.0 V Maximum Gate-Source Voltage ±20 V Total Gate Charge 120 to 170 nC Body Diode Forward Voltage 1.3 V Operating Junction Temperature Range -55°C to 175°C Pin Configuration: Applications: Synchronous rectification in switch-mode power supplies. Motor control circuits. DC-DC converters. Uninterruptible power supplies. Solar charge controllers. High-speed power switching. Hard-switched and high-frequency circuits. Package Include: 1x IRFB3206 N-Channel MOSFET Transistor Datasheet: IRFB3206

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