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IRF1404PBF Power MOSFET Transistor N-Channel 40V 162A TO-220
IRF1404PBF

IRF1404PBF Power MOSFET Transistor N-Channel 40V 162A TO-220

In stockTransistors & MOSFETsVerified 26 minutes ago

EGP 35

Makers Electronics

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Description

IRF1404PBF Power MOSFET Transistor N-Channel 40V 162A TO-220 IRF1404PBF Power MOSFET Transistor N-Channel 40V 162A TO-220 – Ultra Low RDS(on), High Efficiency Switching Transistor is a high-power N-channel MOSFET designed for efficient switching and power management applications. With extremely low on-resistance and a high current handling capability of up to 162A, it is ideal for motor control, DC-DC converters, power supplies, and high-efficiency switching circuits. The TO-220 package ensures excellent thermal performance and easy mounting for heat dissipation, making it suitable for industrial, automotive, and DIY high-power electronics projects. Features Ultra-low RDS(on) for high efficiency switching performance. High continuous drain current capability up to 162A. Supports 40V drain-source voltage rating. Fast switching speed for improved circuit response. TO-220 package ensures excellent heat dissipation. Suitable for high-power motor control applications. Reliable performance in power electronics circuits. Optimized for low conduction losses. Easy to drive in switching applications. Ideal for industrial and DIY power systems. Specifications Parameter Details Part Number IRF1404PBF Transistor Type N-Channel Power MOSFET Package Type TO-220AB Drain-To-Source Breakdown Voltage (VDS) 40V Continuous Drain Current (Silicon Limited) 202A At 25°C Case Temperature Continuous Drain Current (Package Limited) 75A Due To Lead Wire Limitations Static Drain-To-Source On-Resistance (RDS(on)) 0.004Ω Maximum At 110A Gate Drive Gate Threshold Voltage (VGS(th)) 2.0V To 4.0V Gate-To-Source Voltage (VGS) ±20V Maximum Total Gate Charge (Qg) 131nC Typical Maximum Power Dissipation (PD) 333W At 25°C Case Temperature Single Pulse Avalanche Energy (EAS) 620mJ Maximum Operating Junction Temperature Range -55°C To +175°C Thermal Resistance Junction-To-Case (RθJC) 0.45°C/W Maximum Thermal Resistance Junction-To-Ambient (RθJA) 62°C/W Maximum Mounting Type Through Hole Applications Power Switching, Motor Control, DC-DC Converters, Power Supplies Dimensions Pin Configuration Pin Number Pin Name Function/Description 1 Gate Controlling terminal for the MOSFET. Applied voltage controls the drain current. 2 (and Tab) Drain Main current-carrying terminal. Connected to the heat-dissipating tab. 3 Source Common connection for both Gate and Drain current. Applications DC motor speed control circuits. Power supply switching circuits. DC-DC converter modules. Automotive electronic systems. High-current battery protection circuits. Inverter and UPS systems. LED high-power drivers. Solar power regulation systems. Industrial automation equipment. DIY high-power electronics projects. Package Contents 1 x IRF1404PBF Power MOSFET Transistor N-Channel 40V 162A TO-220 Datasheet IRF1404PBF

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IRF1404PBF Power MOSFET Transistor N-Channel 40V 162A TO-220 · makhzan