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MagnaChip MBQ40T120FESTH IGBT Transistor 1200V 80A TO-247
MBQ40T120FESTH

MagnaChip MBQ40T120FESTH IGBT Transistor 1200V 80A TO-247

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EGP 250

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Description

MagnaChip MBQ40T120FESTH IGBT Transistor 1200V 80A TO-247 The MBQ40T120FESTH from Magnachip Semiconductor is a high speed 1200V Field Stop Trench IGBT rated for a collector current of 80A at T C = 25°C. It is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low V CE(sat) , high switching performance and excellent quality. The device incorporates an ultra soft, fast recovery anti-parallel diode (t rr = 100ns typ.) and offers high input impedance, ultra narrowed V F distribution control and a positive temperature coefficient for easy paralleling. This IGBT is intended for PFC, UPS & Inverter applications. Features High speed switching & low power loss V CE(sat) = 2.0V @ I C = 40A High input impedance t rr = 100ns (typ.) Ultra soft, fast recovery anti-parallel diode Ultra narrowed V F distribution control Positive temperature coefficient for easy paralleling Specifications Absolute Maximum Ratings Characteristics Symbol Rating Unit Collector-emitter voltage V CES 1200 V Gate-emitter voltage V GES ±20 V Collector current @ T C = 25°C I C 80 A Collector current @ T C = 100°C I C 40 A Pulsed collector current (pulse time limited by T jmax ) I CM 160 A Diode forward current @ T C = 100°C I F 40 A Diode pulsed current (pulse time limited by T jmax ) I FM 160 A Power dissipation @ T C = 25°C P D 357 W Power dissipation @ T C = 100°C P D 142 W Short circuit withstand time (V CE = 600V, V GE = 15V, T C = 150°C) t sc 10 μs Operating junction and storage temperature range T J , T stg -55 to +150 °C Thermal Characteristics Characteristics Symbol Rating Unit Thermal resistance, junction-to-ambient R θJA 40 °C/W Thermal resistance, junction-to-case (IGBT) R θJC 0.35 °C/W Thermal resistance, junction-to-case (Diode) R θJC 0.8 °C/W Electrical Characteristics (T C = 25°C unless otherwise specified) Characteristics Symbol Test Condition Min Typ Max Unit Collector-emitter breakdown voltage BV CES I C = 1mA, V GE = 0V 1200 – – V Gate-emitter threshold voltage V GE(th) V CE = V GE , I C = 1mA 4.5 5.5 6.5 V Zero gate voltage collector current I CES V CE = 1200V, V GE = 0V – – 1 mA Gate-emitter leakage current I GES V GE = 20V, V CE = 0V – – ±250 nA Collector-emitter saturation voltage V CE(sat) I C = 40A, V GE = 15V, T C = 25°C – 2.0 2.4 V Collector-emitter saturation voltage V CE(sat) I C = 40A, V GE = 15V, T C = 150°C – 2.45 – V Total gate charge Q g V CE = 600V, I C = 40A, V GE = 15V – 341 – nC Gate-emitter charge Q ge V CE = 600V, I C = 40A, V GE = 15V – 52 – nC Gate-collector charge Q gc V CE = 600V, I C = 40A, V GE = 15V – 126 – nC Input capacitance C ies V CE = 30V, V GE = 0V, f = 1MHz – 6030 – pF Reverse transfer capacitance C res V CE = 30V, V GE = 0V, f = 1MHz – 107 – pF Output capacitance C oes V CE = 30V, V GE = 0V, f = 1MHz – 206 – pF Switching Characteristics (Inductive Load, V GE = 15V, V CC = 600V, I C = 40A, R G = 10Ω) Characteristics Symbol T C = 25°C T C = 150°C Unit Turn-on delay time t d(on) 65 70 ns Rise time t r 55 62 ns Turn-off delay time t d(off) 308 325 ns Fall time t f 40 62 ns Turn-on switching energy E on 1.96 2.35 mJ Turn-off switching energy E off 0.54 1.61 mJ Total switching energy E ts 2.50 3.96 mJ Diode Characteristics (T C = 25°C unless otherwise specified) Characteristics Symbol Test Condition Typ Max Unit Forward voltage V F I F = 40A, T C = 25°C 2.4 3.0 V Forward voltage V F I F = 40A, T C = 150°C 2.45 – V Reverse recovery time t rr I F = 40A, di/dt = 200A/μs, T C = 25°C 100 – ns Reverse recovery current I rr I F = 40A, di/dt = 200A/μs, T C = 25°C 7 – A Reverse recovery charge Q rr I F = 40A, di/dt = 200A/μs, T C = 25°C 350 – nC Reverse recovery time t rr I F = 40A, di/dt = 200A/μs, T C = 150°C 180 – ns Reverse recovery current I rr I F = 40A, di/dt = 200A/μs, T C = 150°C 10 – A Reverse recovery charge Q rr I F = 40A, di/dt = 200A/μs, T C = 150°C 900 – nC Applications PFC (Power Factor Correction) UPS (Uninterruptible Power Supplies) Inverters Package Content 1 x MagnaChip MBQ40T120FESTH IGBT Transistor 1200V 80A TO-247 DataSheet MBQ40T120FES

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