1N5711 Schottky Diode

Description

1N5711 Schottky Diode The 1N5711 is a small‑signal, metal‑to‑silicon Schottky barrier diode housed in a DO‑35 glass package. It features very low forward voltage and ultrafast switching, making it ideal for high‑frequency detection and pulse applications up to UHF/VHF bands. Features Low forward voltage: typ. 0.41 V at IF = 1 mA High reverse voltage: VRRM = 70 V Ultra-fast switching: storage time τ ≈ 100 ps Low junction capacitance: C j ≈ 2 pF @ VR = 0 V, f = 1 MHz Low reverse leakage: IR ≤ 0.2 µA @ VR = 50 V Wide temperature range: –65 °C to +200 °C Compact DO-35 glass package Specifications Absolute Maximum Ratings (Ta = 25 °C) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 70 V Forward Continuous Current IF 15 mA Power Dissipation P tot 430 mW Storage & Junction Temperature T stg , T j –65 to +200 °C Soldering Temperature (10 s) T L 230 °C Thermal Resistance (j–a) RθJA 400 °C/W Electrical Characteristics (Ta = 25 °C) Characteristic Test Condition Min Typ Max Unit Reverse Breakdown Voltage IR = 10 µA 70 V Forward Voltage IF = 1 mA 0.41 V Forward Voltage IF = 15 mA 1.0 V Reverse Leakage Current VR = 50 V 0.2 µA Junction Capacitance VR = 0 V, f = 1 MHz 2 pF Storage Time (τ) IF = 5 mA (Krakauer Method) 100 ps Applications UHF/VHF envelope detectors and mixers High‑speed pulse detection and sampling Clamp, steering, and voltage‑reference circuits RF detector diodes in communication modules Fast‑recovery switching in logic‑level applications DataSheet 1n5711

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