IRFB4229 MOSFET Transistor 250V 46A 330W TO-220

Description

IRFB4229 MOSFET Transistor 250V 46A 330W TO-220 A robust and efficient solution for high-power applications, the IRFB4229 N-Channel MOSFET is engineered for superior performance and reliability. This transistor is an excellent choice for power management in a variety of electronic circuits. Its advanced design ensures fast switching speeds and low on-resistance, making it a highly effective component for demanding tasks. Features Low On-Resistance High Voltage and Current Fast Switching High Temperature Operation Robust and Reliable Enhancement Mode Specification SYMBOL PARAMETER VALUE UNIT V DSS Drain-Source Voltage 250 V V GS Gate-Source Voltage ±30 V I D Drain Current-Continuous 46 A I DM Drain Current-Single Pulsed 180 A P D Total Dissipation @Tc=25°C 330 W T j Max. Operating Junction Temperature 175 °C T stg Storage Temperature -40~175 °C Thermal Characteristics SYMBOL PARAMETER MAX UNIT R th(ch-c) Channel-to-case thermal resistance 0.45 °C/W R th(ch-a) Channel-to-ambient thermal resistance 62 °C/W Electrical Characteristics (Tc=25°C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BV DSS Drain-Source Breakdown Voltage V GS =0V; I D =250 µA 250 V V GS(th) Gate Threshold Voltage V DS =V GS ; I D =250 µA 3 5 V R DS(on) Drain-Source On-Resistance V GS =10V; I D =26A 46 mΩ I GSS Gate-Source Leakage Current V GS = ±20V ±0.1 µA I DSS Drain-Source Leakage Current V DS =250V; V GS = 0V 20 µA V SD Diode forward voltage I S =26A; V GS = 0V 1.3 V Pin Configuration: Applications Power supply units DC-DC converters Motor control systems Inverters and converters Switching regulators Power management systems Package Include: 1x IRFB4229 MOSFET Transistor 250V 46A 330W TO-220 DataSheet IRFB4229

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