FQP40N10 N-Channel Power MOSFET Transistor 100V 40A 150W TO-220
EGP 30
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FQP40N10 N-Channel Power MOSFET Transistor 100V 40A 150W TO-220 The FQP40N10 N-Channel Power MOSFET Transistor 100V 40A 150W TO-220 is a robust and versatile power switching device engineered to handle significant current and voltage demands in electronic power management applications. Featuring an N-channel enhancement mode MOSFET construction, this component is designed to provide efficient load switching with fast response characteristics and low conduction losses. It is enclosed in a durable TO-220 through-hole package, making it convenient for mounting on printed circuit boards or heatsinks in industrial, automotive, and consumer-grade designs. Features: N-Channel enhancement mode power MOSFET with high current capability. Rated for 100 V drain-to-source voltage to support moderate voltage systems. Continuous drain current of 40 A for robust power handling. Low on-resistance (~0.04 Ω) to reduce conduction losses. Fast switching characteristics for efficient PWM and converter operation. TO-220 through-hole package for easy mounting and heatsinking Specifications: Parameter Specification Type Designator 40N10 Transistor Type MOSFET Channel Type N-Channel Maximum Power Dissipation (Pd) 150 W Maximum Drain-Source Voltage (|Vds|) 100 V Maximum Gate-Source Voltage (|Vgs|) 30 V Maximum Gate-Threshold Voltage (Vgs(th)) 4 V Maximum Drain Current (Id) 40 A Maximum Junction Temperature (Tj) 150 °C Rise Time (tr) 30 ns Drain-Source Capacitance (Cd) 2500 pF Maximum Drain-Source On-State Resistance (Rds) 0.04 Ω Package TO-220 Pin Configuration: Applications: Switching power supplies and DC-DC converters. Motor control and driver circuits. Automotive power management systems. Industrial automation and control electronics. PWM power controllers and relay drivers. Datasheet: 40N10
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