P10N60 N-Channel MOSFET Transistors TO-220F

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. Features 9.5A, 900V, Rds(on)=730mΩ (Max.) @ Vgs=10V, Id=4.75A Low Gate Charge (Typ. 40nC) Low Crss (Typ. 18pF) 100% Avalanche Tested Specifications Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package / Case: TO-220F Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds – Drain-Source Breakdown Voltage: 600 V Id – Continuous Drain Current: 9.5 A Rds On – Drain-Source Resistance: 730 mOhms Vgs – Gate-Source Voltage: – 30 V, + 30 V Vgs th – Gate-Source Threshold Voltage: 4 V Qg – Gate Charge: 44 nC Minimum Operating Temperature: – 55 C Maximum Operating Temperature: + 150 C Pd – Power Dissipation: 50 W Configuration: Single Fall Time: 77 ns Rise Time: 69 ns Type: MOSFET Typical Turn-Off Delay Time: 144 ns Typical Turn-On Delay Time: 23 ns Datasheet FQPF10N60C Datasheet (PDF)

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