M27C4001-12F1 4Mbit (512K x 8) 120ns UV EPROM IC DIP-32

Description

M27C4001-12F1 4Mbit (512K x 8) 120ns UV EPROM IC DIP-32 A 4Mbit UV EPROM integrated circuit designed for non-volatile program and data storage in microprocessor-based systems. The device provides a 524,288 × 8-bit memory organization and uses a parallel address and data interface with 19 address inputs and 8 data outputs. Features: 4Mbit UV-erasable EPROM memory. 524,288 × 8-bit memory organization. 512K × 8 parallel memory architecture. 120ns maximum access-time grade for the -12 variant. 5V±10% supply voltage during read operation. 19 address inputs from A0 to A18. 8 data outputs from Q0 to Q7. Specifications: Parameter Value Part Number M27C4001-12F1 Memory Type UV EPROM Memory Capacity 4Mbit Organization 524,288 x 8bit Organization Equivalent 512K x 8 Access Time 120ns Supply Voltage 5V±10% Programming Voltage 12.75V±0.25V Programming Supply Voltage 6.25V±0.25V Address Inputs A0–A18 Data Outputs Q0–Q7 Control Inputs E, G Active Supply Current 30mA at 5MHz CMOS Standby Current 100µA Input Leakage Current ±10µA Output Leakage Current ±10µA Input Low Voltage -0.3V to 0.8V Input High Voltage 2V to VCC+1V Package FDIP32W Package Type 32-Pin Ceramic Frit-Seal DIP with Window Temperature Range 0°C to 70°C Pin Configuration: Footprint: Applications: Microprocessor program memory. Legacy computer systems. Embedded system firmware storage. Industrial control equipment. Electronic equipment requiring reprogrammable UV EPROM memory. Development and prototyping systems. Replacement of compatible 4Mbit EPROM devices. Package Include: 1x M27C4001-12F1 4Mbit (512K x 8) 120ns UV EPROM IC DIP-32. Datasheet

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