BD681 NPN Silicon Transistor

Description

BD681 NPN Silicon Transistor The BD681 is a high-gain NPN silicon Darlington transistor in a TO-220-style (SOT-32) package. It’s manufactured using planar base island technology and features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode. This design delivers excellent linearity and high frequency response, making it ideal for both switching and linear applications in industrial equipment. Features Monolithic Darlington configuration with built-in antiparallel diode High DC current gain (h FE min. 750 at I C =1.5 A, V CE =3 V) Good h FE linearity over operating range High transition frequency (f T ) Planar base island technology for improved reliability Through-hole SOT-32 (TO-220) package for easy mounting and heat sinking Specifications Parameter Value Absolute Maximum Ratings Collector-Emitter Voltage (V_CEO) 100 V Collector-Base Voltage (V_CBO) 100 V Emitter-Base Voltage (V_EBO) 5 V Collector Current (I_C) 4 A Base Current (I_B) 100 mA Total Power Dissipation (P_tot) 40 W (at T_C=25°C) Junction Temperature (T_J) 150 °C Storage Temperature (T_stg) -65 °C to 150 °C Electrical Characteristics (at T_CASE=25°C unless specified) Collector Cut-off Current (I_CEO) max 0.5 mA at V_CE=100 V, I_B=0 Collector Cut-off Current (I_CBO) max 0.2 mA at V_CB=100 V, I_E=0 Emitter Cut-off Current (I_EBO) max 2 mA at V_EB=5 V, I_C=0 Collector-Emitter Sustaining Voltage (V_CEO(sus)) min 100 V at I_C=50 mA, I_B=0 DC Current Gain (h_FE) min 750 at I_C=1.5 A, V_CE=3 V Collector-Emitter Saturation Voltage (V_CE(sat)) max 2.5 V at I_C=1.5 A, I_B=30 mA Base-Emitter On Voltage (V_BE(on)) max 2.5 V at I_C=1.5 A, V_CE=3 V Package Type TO-126 Pin Configuration 1. Base, 2. Collector, 3. Emitter Integrated Antiparallel Diode Yes Applications Audio Power Amplifiers Linear Voltage Regulators Switching Power Supplies Motor Control Circuits Relay and Solenoid Drivers General-Purpose Switching and Amplification DataSheet BD681 NPN

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