5N60 N-CHANNEL POWER MOSFET 2.6A 600V
EGP 13
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5N60 N-CHANNEL POWER MOSFET 2.6A 600V The 5N60 is a high-voltage N-channel power MOSFET designed for high-speed switching applications. It utilizes advanced planar stripe and DMOS technology to provide excellent switching performance, low on-state resistance, and high avalanche energy. This MOSFET is a robust and reliable component suitable for a wide range of power applications. It is available in a TO-220F package. Features High Voltage Capability Low On-Resistance (RDS(on)) Fast Switching Speed Avalanche Ruggedness Logic Level Gate Drive Rugged Gate Oxide Technology Specifications Parameter Symbol Value Unit Drain-Source Voltage V DSS 600 V Continuous Drain Current (T C =25°C) I D 2.6 A Continuous Drain Current (T C =100°C) I D 1.65 A Pulsed Drain Current I DM 10 A Gate-Source Voltage V GS ±30 V Static Drain-Source On-Resistance (@ V GS =10V, I D =1.3A) R DS(on) 2.2 (Max) Ω Single Pulsed Avalanche Energy E AS 331 mJ Total Power Dissipation (T C =25°C) P D 37 W Operating Junction Temperature T J -55 to +150 °C Package Type – TO-220F – Applications Switch Mode Power Supplies (SMPS) Motor Control DC-DC Converters Lighting Applications DataSheet 5N60
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