FQPF18N60C 18A 600V N-Channel MOSFET Transistor TO-220F
EGP 25
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FQPF18N60C 18A 600V N-Channel MOSFET Transistor TO-220F The FQPF18N-60C 18A 600V N-Channel MOSFET Transistor TO-220F is a high-performance power MOSFET designed for fast switching and high-efficiency power conversion applications. Built using advanced MOSFET technology, this device provides excellent switching characteristics, high voltage capability, and low conduction losses, making it ideal for modern power electronics systems. Features: N-Channel power MOSFET transistor. High drain-source voltage rating up to 600V. Continuous drain current up to 18A. Low drain-source on-resistance for improved efficiency. Fast switching performance for high-frequency circuits. Specifications: Parameter Value Drain-Source Voltage 600V Gate-Source Voltage ±30V Drain Current Continuous (TC=25°C) 18A Drain Current Continuous (TC=100°C) 11A Drain Current Pulsed 72A Power Dissipation 68W RDS(on) 0.65Ω max Gate Threshold Voltage 2V to 4V Total Gate Charge 48nC typ Operating Junction Temperature -55°C to +150°C Package TO-220F Pin Configuration: Footprint: Applications: Switch mode power supplies and DC-DC converters. Motor drivers and inverter circuits. Battery chargers and adapters. Power factor correction stages. Lighting ballasts and LED drivers. Industrial power control and automation systems. General high-voltage switching applications. Package Include: 1x FQPF18N-60C 18A 600V N-Channel MOSFET Transistor TO-220F. Datasheet: FQPF18N60C
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