MMP60R580P N-Channel MOSFET Transistor 600V 8A TO-220F

Description

MMP60R580P N-Channel MOSFET Transistor 600V 8A TO-220F The MMP60R580P is a high-voltage N-channel power MOSFET fabricated with Magnachip’s super-junction technology to deliver low on-resistance and reduced switching losses for efficient, low-EMI operation in high-voltage converters and motor control stages. It is rated for 600V drain-source voltage, supports an 8A continuous drain current at TC=25 °C, and is supplied in a TO-220F (insulated) style package suitable for through-hole mounting with robust thermal performance. Features 600V drain-source voltage rating for high-voltage switching applications. Continuous drain current 8A at TC=25°C with 32A pulsed capability for transient loads. Low RDS(on) for reduced conduction losses (typical RDS(on) ≈0.53 Ω at VGS=10 V, ID=2.5 A). Low total gate charge (Qg typ. 18 nC) enabling faster switching and lower gate drive losses. 100% avalanche tested with single-pulse avalanche energy rating for rugged inductive switching. Integrated body diode with specified forward drop and reverse-recovery characteristics for snubber and synchronous-rectifier considerations. Specifications Absolute Maximum Rating (T C =25°C unless otherwise specified) Parameter Symbol Rating Unit Drain – Source voltage V DSS 600 V Gate – Source voltage V GSS ±30 V Continuous drain current I D 8 (T C =25°C) 5 (T C =100°C) A Pulsed drain current (1) I DM 32 A Power dissipation P D 70 W Single-pulse avalanche energy E AS 170 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness dv/dt 15 V/ns Storage temperature T stg −55 to +150 °C Maximum operating junction temperature T j 150 °C Notes: Pulse width t p limited by T j,max . I SD ≤ I D , V DS peak ≤ V BR(DSS) . For full electrical specifications, graphs, or test circuits, check the datasheet down below. Applications Power factor correction (PFC) stages and high-voltage SMPS primary switching. . DC–DC converters and adapter power supplies. . Motor drives and inductive load switching where avalanche ruggedness is required. . Synchronous-rectifier stages and high-voltage switching applications demanding low switching losses. Package Contents 1x MMP60R580P N-Channel MOSFET Transistor TO-220F. Documents Datasheet MMP60R580P

From the supplier's page.