IRFB4410 N-Channel MOSFET Transistor 100V 88A TO-220AB

Description

IRFB4410 N-Channel MOSFET Transistor 100V 88A TO-220AB The IRFB4410 is a high-performance N-Channel power MOSFET designed for fast switching and efficient power control in high-current applications. Built using advanced MOSFET technology, it provides low on-resistance and high current handling capability, making it ideal for power switching circuits, motor drivers, DC-DC converters, and battery-powered systems. The device is housed in a TO-220AB through-hole package, which offers good thermal performance and easy mounting on heatsinks for improved heat dissipation. This MOSFET supports high voltage and current ratings, allowing it to operate reliably in demanding power electronics environments. Its low gate charge and fast switching characteristics help reduce switching losses and improve overall system efficiency. The IRFB4410 is widely used in industrial power systems, automotive electronics, inverters, and switching power supplies where high efficiency and durability are required. Features: The IRFB4410 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) featuring high current handling capabilities and low Rds(on) (on-resistance). It is designed to operate in switching applications, providing high efficiency and fast switching characteristics. High Current Rating where Capable of handling high currents (up to 88A). High Breakdown Voltage where Rated at 100V, suitable for medium voltage applications. Its low gate charge, low on-resistance, and high current rating make it ideal for use in power regulation and motor control circuits. Low Gate Charge (Qg) where Ensures fast switching speeds, reducing the switching losses. Thermal Stability where With a TO-220 package, it can dissipate power efficiently. Specifications: Parameter Value Model IRFB4410 Product Type MOSFETs Channel Mode Enhancement Configuration Single Transistor Type N-Channel Number of Channels 1 Channel Mounting Style Through Hole Package/Case TO220AB Vds-Drain-Source Breakdown Voltage 100V Id-Continuous Drain Current 88A Rds On-Drain-Source Resistance 10mΩ Vgs-Gate-Source Voltage(Max.) – 20 V , + 20 V Operating Temperature – 55 °C to + 175 °C Pd-Power Dissipation 250W Pinout: Pin Number Pin Name Description 1 Gate (G) Control pin. Connect to the driving signal (logic or microcontroller) via a resistor. 2 Drain (D) Current flow input. Typically connected to the load and the positive supply voltage. 3 Source (S) Current flow output. Typically connected to ground (GND). Applications: High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. High Speed Power Switching. Hard Switched and High Frequency Circuits. Packages: 1x IRFB4410 N-Channel MOSFET Transistor 100V 88A TO-220AB. Datasheet: IRFB4410

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