MBQ40T120FES IGPT Transistor TO-247 (1200V, 80A)
EGP 130
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General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. This device is for PFC, UPS & Inverter applications Features High Speed Switching & Low Power Loss VCE(sat) = 2.0V @ IC = 40A High Input Impedance trr = 100ns (typ.) Ultra Soft, fast recovery anti-parallel diode Ultra narrowed VF distribution control Positive Temperature coefficient for easy paralleling Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V Collector current TC=25°C IC 80 A TC=100°C 40 A Pulsed collector current, pulse time limited by Tjmax ICM 160 A Diode forward current @ TC = 100°C IF 40 A Diode pulsed current, Pulse time limited by Tjmax IFM 160 A Power dissipation TC=25°C PD 357 W TC=100°C 142 W Short circuit withstand time VCE = 600V, VGE = 15V, TC = 150°C tsc 10 μs Operating Junction and storage temperature range TJ, Tstg -55~150 °C MBQ40T120FES Datasheet
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