
FGL80N100 N-Channel IGBT Transistor 1000V 80A TO-264
EGP 185
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FGL80N100 N-Channel IGBT Transistor 1000V 80A TO-264 The FGL80N100 is a high-power N-channel IGBT designed for applications that require high voltage, high current, and fast switching performance. Its low on-state resistance and excellent switching characteristics make it suitable for power management systems where efficiency and reliability are essential. This IGBT is widely used in industrial equipment, DC-DC converters, inverters, battery charging systems, uninterruptible power supplies, and motor control circuits. The through-hole package provides effective heat dissipation and simplifies installation in high-power electronic designs. Features: N-channel IGBT design. High-voltage switching capability. High-current handling performance. Fast switching characteristics. Low on-state resistance. Suitable for high-power applications. Excellent thermal performance. Through-hole package for easy mounting. Designed for industrial and commercial applications. Reliable operation under demanding conditions. Specifications: Specification Value Transistor Type N-Channel IGBT Part Number FGL80N100 Drain-Source Voltage (VDS) 1000V Continuous Drain Current (ID) 80A Gate-Source Voltage (VGS) ±30V Power Dissipation 400W Package Type TO-264 Mounting Type Through-Hole Operating Temperature -55°C to +150°C Pinout: Pin Description 1 Gate 2 Collector 3 Emitter Applications: Switching power supplies. Power inverters. Motor control circuits. Battery charging systems. DC-DC converters. Industrial automation equipment. UPS systems. High-power switching circuits. Solar power systems. Electronic repair and maintenance. Package Includes: 1x FGL80N100 N-Channel IGBT Transistor 1000V 80A TO-264 Datasheet
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