40T03 N-Channel MOSFET Transistor

Description

40T03 N-Channel MOSFET Transistor The 40T03 N-Channel MOSFET Transistor is a high-performance enhancement mode power MOSFET engineered to deliver superior efficiency and reliability in modern electronic circuits. Manufactured by GTM Corporation, this component features a drain-source voltage rating of 30V, a low on-resistance of 25mΩ, and a continuous drain current capability of up to 28A at 25°C, making it an excellent choice for applications requiring robust power handling with minimal losses. Its ruggedized design ensures durability under demanding conditions, while the low gate charge facilitates simple drive requirements, reducing the complexity of supporting circuitry. Features: Low gate charge for efficient operation. Simple drive requirements reducing circuit complexity. Fast switching characteristics for high-speed applications. Ruggedized design ensuring durability. Specifications: Parameter Value Drain-Source Voltage 30V Gate-Source Voltage ±25V Continuous Drain Current (at 25°C) 28A Continuous Drain Current (at 100°C) 24A Pulsed Drain Current 95A Total Power Dissipation (at 25°C) 31.25W Gate Threshold Voltage 1.0-3.0V Static Drain-Source On-Resistance (at VGS=10V) 25mΩ Static Drain-Source On-Resistance (at VGS=4.5V) 45mΩ Forward Transconductance 15S Input Capacitance 655pF Output Capacitance 145pF Reverse Transfer Capacitance 95pF Total Gate Charge 8.8nC Turn-On Delay Time 6ns Rise Time 62ns Turn-Off Delay Time 16ns Fall Time 4.4ns Source-Drain Diode Forward Voltage 1.3V Operating Temperature Range -55to+150°C Applications: DC/DC converters for power regulation. Low-voltage power management systems. Motor control circuits. Battery charging applications. Switching power supplies. LED drivers and lighting systems. Package Include: 1x 40T03 N-Channel MOSFET Transistor. Datasheet: 40T03

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