13N65 N-Channel Power MOSFET Transistor 600V 13A TO-220F

Description

13N65 N-Channel Power MOSFET Transistor 600V 13A TO-220F The 13N65 N-Channel Power MOSFET is a high-performance power transistor designed for efficient switching and power management in high-voltage electronic circuits. With its ability to handle substantial voltage and current levels, it is widely used in power supplies, DC-DC converters, motor drivers, and industrial control systems. The TO-220F fully insulated package provides convenient mounting and improved electrical isolation for safer circuit design. Engineered for fast switching operation and low conduction losses, the 13N65 MOSFET helps improve overall system efficiency while reducing heat generation. Its rugged design, avalanche capability, and reliable performance make it suitable for demanding applications including power conversion, renewable energy systems, battery chargers, and various high-frequency switching circuits. Features: N-Channel enhancement mode MOSFET. Fast switching performance. Low gate charge design. Low on-state resistance. High voltage switching capability. High current handling capability. Avalanche rugged construction. Improved dv/dt capability. Suitable for high-frequency operation. Fully insulated TO-220F package. High efficiency power switching. Reliable thermal performance. RoHS compliant. Specifications: SYMBOL PARAMETER TEST CONDITIONS VALUE UNIT VDSS ​ Drain to Source voltage TJ=25∘C T J ​ = 2 5 ∘ C to 150∘C 15 0 ∘ C 600 V VDGR ​ Drain to Gate voltage RGS=20 kΩ R GS ​ = 20 k Ω 600 V VGS ​ Gate to Source voltage — ±30 ± 30 V ID ​ Continuous Drain Current TC=25∘C T C ​ = 2 5 ∘ C 13 A TC=100∘C T C ​ = 10 0 ∘ C 8.2 A IDM ​ Pulsed Drain current (Note 1) — 39 A IAR ​ Avalanche current (Note 1) — 4.3 A EAR ​ Repetitive avalanche energy (Note 1) IAR=4.3 A, RGS=50 Ω, VGS=10 V I A R ​ = 4.3 A , R GS ​ = 50 Ω , V GS ​ = 10 V 1.2 mJ EAS ​ Single pulse avalanche energy (Note 2) IAS=4.3 A I A S ​ = 4.3 A 235 mJ dv/dt MOSFET dv/dt ruggedness — 100 V/ns Peak diode recovery dv/dt (Note 3) — 20 V/ns PD ​ Total power dissipation (Derate above 25∘C 2 5 ∘ C ) TC=25∘C T C ​ = 2 5 ∘ C , TO-220AB 116 (0.93) W (W/°C) TC=25∘C T C ​ = 2 5 ∘ C , TO-220F 34 (0.27) W (W/°C) TJ ​ Operation junction temperature — −55 − 55 to 150 150 °C TSTG ​ Storage temperature — −55 − 55 to 150 150 °C TL ​ Maximum soldering temperature, for 10 seconds 1.6 mm from case 300 °C — Mounting torque #6-32 or M3 screw 10 (1.1) lbf·in (N·m) Pinout: Pin Name Description 1 Gate (G) Controls MOSFET switching 2 Drain (D) High-power current path 3 Source (S) Current return path Applications: Switch Mode Power Supplies (SMPS). AC-DC Power Converters. DC-DC Converters. PWM Motor Controllers. Power Inverters. Battery Chargers. Industrial Automation Equipment. Solar Power Systems. UPS Systems. LED Power Drivers. High-Voltage Switching Circuits. Bridge Switching Circuits. General-Purpose Power Switching. Package Includes: 1x 13N65 N-Channel Power MOSFET Transistor 600V 13A TO-220F. Documents: 13N65 Datasheet.

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