IRF820 N-Channel MOSFET (2.5A,500V,3Ohm)
EGP 8
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Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Specifications Current : Continuous Drain Current @ 10V, TC = 25 °C – 2.5A Continuous Drain Current @ 10V, TC = 100 °C- 1.6A Pulsed Drain Current – 8A Voltage : Drain-Source Voltage – 500V Gate-Source Voltage – ± 20V IRF820 N-Channel MOSFET Datasheet
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