
MJE15032 NPN Power Transistor 250V 8A TO-220
EGP 40
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MJE15032 NPN Power Transistor 250V 8A TO-220 The MJE15032 is a 250 V, 8 A NPN power transistor in a TO-220 package, built for driver stages and moderate-power switching. It offers high DC current gain, a solid gain-bandwidth product for fast response, and low saturation voltage for efficient switching. Features Collector-Emitter voltage: 250 V Collector current (continuous): 8 A; Peak 16 A High DC current gain High current-gain × bandwidth product (fT ≈ 30 MHz typical) TO-220 compact package Package & pinout Specifications Maximum Ratings (absolute maximums) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 250 Vdc Collector-Base Voltage V CB 250 Vdc Emitter-Base Voltage V EB 5.0 Vdc Collector Current — continuous I C 8.0 Adc Collector Current — peak I CM 16 Adc Base Current I B 2.0 Adc Total Power Dissipation @ T C =25°C P D 50 (derate 0.40) W (W/°C) Total Power Dissipation @ T A =25°C P D 2.0 (derate 0.016) W (W/°C) Operating & storage junction temperature T J , T stg −65 to +150 °C ESD — Human Body Model HBM 3B — Electrical Characteristics (TC = 25°C unless noted) Characteristic Symbol / Test Min Max Unit / Notes Collector-Emitter sustaining voltage (IC = 10 mA, IB = 0) V CEO(sus) 250 — Vdc Collector cutoff current (VCB = 250 V, IE = 0) I CBO — 10 µAdc Emitter cutoff current (VBE = 5.0 V, IC = 0) I EBO — 10 µAdc DC current gain (IC = 0.5 A, VCE = 5 V) h FE 70 — — DC current gain (IC = 1.0 A, VCE = 5 V) h FE 50 — — DC current gain (IC = 2.0 A, VCE = 5 V) h FE 10 — — Collector-Emitter saturation voltage (IC = 1.0 A, IB = 0.1 A) V CE(sat) — 0.5 Vdc Base-Emitter on voltage (IC = 1.0 A, VCE = 5.0 V) V BE(on) — 1.0 Vdc Current gain — bandwidth product (IC = 0.5 A, VCE = 10 V, ftest = 1 MHz) f T 30 — MHz Applications High-frequency driver stages in audio power amplifiers (driver transistor) General power switching where 250 V blocking and moderate current are required Complementary amplifier stages together with MJE15033 (PNP) Datasheet MJE15032
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