Toshiba TC5047AP-1 1024-Word x 4-Bit CMOS Static RAM 5V 20mA DIP-20

Description

Toshiba TC5047AP-1 1024-Word x 4-Bit CMOS Static RAM 5V 20mA DIP-20 The TC5047AP-1 is a static read/write memory organized as 1024 words by 4 bits, manufactured using Silicon Gate CMOS technology . It features ultra-low power dissipation, making it suitable for battery-operated portable memory systems and nonvolatile memory applications with battery backup . The device operates from a single 5V power supply and requires no refresh cycles due to its static operation, which simplifies power supply circuit design . It includes three-state outputs for easy memory expansion and microprocessor peripheral interface, alongside low minimum data retention voltage requiring simple backup circuitry . Features CMOS static RAM architecture. Static operation without refresh requirements. Low power consumption. Three-state outputs for easy memory expansion. TTL-compatible input and output levels. Suitable for battery-backed memory systems. Single power supply operation. Reliable data retention capability. Through-hole package for easy PCB mounting. Designed for microprocessor peripheral memory applications. Specifications Recommended Operating Conditions ( T a = -30 to 85 °C ) Parameter Symbol Min Typ Max Unit Supply Voltage V DD 4.5 5.0 5.5 V Input High Voltage V IH V DD – 1.5 – V DD + 0.3 V Input Low Voltage V IL -0.3 – 0.6 V Data Retention Voltage V DH 2.0 – 5.5 V DC Electrical Characteristics ( T a = -30 to 85 °C ) Parameter Symbol Test Conditions Min Typ Max Unit Standby Current I DDS V DD = 2 ~ 5.5V, CE 2 = 0.2V – – 20 μA Operating Current I DDO V DD = 5.5V, t CYC = 1 μs – 10 20 mA Input Current I IN 0V ≤ V IN ≤ V DD -1.0 – 1.0 μA Output Leakage Current I LO 0V ≤ V OUT ≤ V DD -5.0 – 5.0 μA Output High Current I OH V DD = 4.5V, V OH = 2.4V -1.0 – – mA Output Low Current I OL V DD = 4.5V, V OL = 0.4V 1.6 – – mA AC Characteristics ( V DD = 4.5 ~ 5.5V, T a = -30 to 85 °C, C L = 100 pF ) Parameter Symbol Min Max Unit Access Time t ACC – 550 ns Read Cycle Time t RC 650 – ns Write Cycle Time t WC 650 – ns Precharge Time t PC 100 – ns Write Pulse Width t WP 300 – ns Data Setup Time t DS 300 – ns Data Hold Time t DH 0 – ns Absolute Maximum Ratings Parameter Symbol Rating Unit Power Supply Voltage V DD -0.3 to 7.0 V Input Voltage V IN -0.3 to V DD + 0.3 V Output Voltage V OUT 0 to V DD V Power Dissipation P D 700 (at T a = 85 °C ) mW Operating Temperature T OPR -30 to 85 °C Storage Temperature T STG -55 to 150 °C Pinout Applications Battery-operated portable memory systems. Nonvolatile memory with battery backup. Microprocessor peripheral memory. Package Content 1 x Toshiba TC5047AP-1 1024-Word x 4-Bit CMOS Static RAM 5V 20mA DIP-20. Datasheet TC5047AP-1

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