2SK1611 N-Channel Power MOSFET Transistor TO-220F 800V, 3A

Description

2SK1611 N-Channel Power MOSFET Transistor TO-220F 800V, 3A The 2SK1611 N‑Channel Power MOSFET Transistor TO‑220F 800V 3A is a robust silicon N‑channel power F‑MOSFET designed for high‑voltage and high‑efficiency switching applications. This device combines a high drain‑source voltage rating of 800 V with a continuous drain current capability of 3 A, making it suitable for demanding power conversion and control circuits. Its TO‑220F ( package supports improved thermal performance, facilitating effective heat dissipation during operation. Features: High avalanche energy capability VGSS: 30V guaranteed Low RDS(on), high-speed switching characteristic N‑Channel enhancement‑mode power MOSFET for high‑voltage switching. High drain‑to‑source breakdown voltage of 800 V. Continuous drain current rating up to 3 A. Specifications: Parameter Value Drain‑Source Breakdown Voltage (VDSS) 800 V Gate‑Source Voltage (VGSS) ±30 V Continuous Drain Current (ID) 3 A Pulse Drain Current (IDP) 6 A Avalanche Energy Capacity (EAS) 20 mJ Max Power Dissipation (PD) 50 W Operating Junction Temp (Tj) −55 °C to +150 °C Storage Temp (Tstg) −55 °C to +150 °C Package Type TO‑220F Applications: High‑voltage switching and power conversion circuits. SMPS power supplies and DC‑DC converters. Motor control and relay drivers. Industrial power electronics and amplification. AC adaptor and inverter circuits. Datasheet: 2sK1611

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