BC639 High Current NPN Transistor 80V 1A TO-92

Description

BC639 High Current NPN Transistor 80V 1A TO-92 The BC639 is an NPN epitaxial silicon transistor designed for switching and amplifier applications. It provides a collector current rating of up to 1A, making it suitable for driving moderate-current loads and as a general-purpose transistor in electronic circuits. The device is supplied in a compact TO-92 package. The BC639 offers an 80V collector-emitter voltage rating, a peak collector current of 1.5A, and a maximum collector power dissipation of 1W. It features a DC current gain of up to 160 under the specified test conditions and a collector-emitter saturation voltage of up to 0.5V at 500mA collector current. Specifications: Specification Value Transistor Type NPN Semiconductor Material Silicon Collector-Emitter Voltage (VCEO) 80V Collector-Emitter Voltage (VCES) 100V Collector-Emitter Voltage at RBE = 1kΩ (VCER) 100V Emitter-Base Voltage (VEBO) 5V Collector Current (IC) 1A Peak Collector Current (ICP) 1.5A Base Current (IB) 100mA Collector Power Dissipation (PC) 1W Junction Temperature (TJ) 150°C Storage Temperature -65 to +150°C DC Current Gain (hFE) at IC = 5mA 40–250 DC Current Gain (hFE) at IC = 150mA 40–160 Collector-Emitter Saturation Voltage 0.5V max. Base-Emitter On Voltage 1V max. Current Gain Bandwidth Product (fT) 100MHz Package TO-92 Pinout: Pin Number Pin Name Description 1 Emitter Electrons emitted from the emitter into the first PN junction 2 Collector Electrons Emitted from Emitter Collected by the Collector 3 Base Controls the biasing of the transistor Applications: Electronic switching circuits. Relay and load drivers. Signal amplification. General-purpose amplifier circuits. Control circuits. Moderate-current switching stages. Packages Included: 1 × BC639 High Current NPN Transistor 80V 1A TO-92. Documents: BC639 Transistor Datasheet.

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