IRFP250N
IRFP250N N-Channel MOSFET Transistor
EGP 70
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IRFP250N N-Channel MOSFET Transistor Type Designator: IRFP250N Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 214 W Maximum Drain-Source Voltage |Vds|: 200 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Drain Current |Id|: 30 A Total Gate Charge (Qg): 123 nC Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm Package: TO247AC IRFP250N Datasheet (PDF) irfp250n.pdf
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