FGL40N120AND IGBT Power Transistor 1200V 40A TO-264-3

Description

FGL40N120AND IGBT Power Transistor 1200V 40A TO-264-3 The FGL40N120AND is a 1200 V NPT IGBT in a TO-264 package with an integrated fast recovery diode. Designed for high-power switching applications, it delivers low conduction loss (typ. VCE(sat) = 2.6 V @ 40 A), high input impedance and fast switching characteristics (typical turn-on/turn-off delays in the 10s–100s ns range). Typical uses include induction heating, UPS, AC/DC motor control and general purpose inverters where both ruggedness and switching speed are required. Features 1200 V collector-emitter blocking voltage (NPT technology). Low saturation voltage: VCE(sat) ≈ 2.6 V @ IC = 40 A, VGE = 15 V. High input impedance (low gate leakage). Integrated fast recovery diode (FRD) with typical trr ≈ 75 ns . Fast switching: td(on) / td(off) in the tens to low hundreds of ns. Robust thermal performance: Pd = 500 W @ TC = 25 °C. Short-circuit withstand capability. Pin Configuration FGL40N120AND — Technical Tables Absolute Maximum Ratings Parameter Value / Conditions Collector-Emitter Voltage (VCES) 1200 V Gate-Emitter Voltage (VGES) ±25 V Collector Current, continuous (IC) 64 A @ TC = 25 °C; 40 A @ TC = 100 °C (case referenced) Pulsed Collector Current (ICM) 160 A (pulse) Diode continuous forward current (IF) 40 A @ TC = 100 °C Diode peak forward current (IFM) 240 A (pulse) Maximum Power Dissipation (PD) 500 W @ TC = 25 °C; (derated at higher TC) Short-circuit withstand time (SCWT) 10 µs (VCE = 600 V, VGE = 15 V, TC = 125 °C — test condition) Operating junction temperature (TJ) -55 to +150 °C Storage temperature (TSTG) -55 to +150 °C Maximum lead temperature for soldering 300 °C (1/8\” from case, 5 s) Off characteristics Parameter Value / Conditions Collector-emitter breakdown voltage (BVCES) 1200 V (VGE = 0 V, IC = 1 mA) Collector cut-off current (ICES) ≤ 1 mA (VCE = VCES, VGE = 0) Gate-emitter leakage (IGES) ≤ ±250 nA (VGE = ±25 V, VCE = 0) On characteristics Parameter Value / Conditions Gate threshold voltage (VGE(th)) typ range ~3.5 – 5.5 – 7.5 V (IC = 250 µA; min-typ-max) Collector-emitter saturation voltage (VCE(sat)) typ 2.6 V @ IC = 40 A, VGE = 15 V; max ≈ 3.2 V VCE(sat) @ elevated T typ 2.9 V @ IC = 40 A, TC = 125 °C VCE(sat) @ IC = 64 A typ ~3.15 V (VGE = 15 V) Capacitances Parameter Value / Test conditions Input capacitance (Cies) ~3200 pF (VCE = 30 V, f = 1 MHz) Output capacitance (Coes) ~370 pF Reverse transfer capacitance (Cres) ~125 pF Switching (typical values) Parameter Value / Conditions td(on) typ 15 ns @ 25 °C (VCC = 600 V, IC = 40 A, RG = 5 Ω, VGE = 15 V); ≈ 20 ns @ 125 °C tr (rise time) typ 20 ns @ 25 °C; ≈ 25 ns @ 125 °C td(off) typ 110 ns @ 25 °C; ≈ 120 ns @ 125 °C tf (fall time) typ 40–80 ns (depend on conditions) Eon (turn-on energy) typ ≈ 2.3 mJ (VCC = 600 V, IC = 40 A) Eoff (turn-off energy) typ ≈ 1.1 mJ Ets (total switching energy) typ ≈ 3.4 mJ Gate charge Parameter Value / Conditions Total gate charge (Qg) typ ~220 nC (range 220 – 330 nC) @ VCE = 600 V, IC = 40 A, VGE = 15 V Qge (gate-emitter) ~25 – 38 nC Qgc (gate-collector) ~130 – 195 nC Diode highlights (integrated FRD) Parameter Value / Conditions Diode forward voltage (VFM) typ ≈ 3.2 V @ IF = 40 A, TC = 25 °C (max ≈ 4.0 V) Reverse recovery time (trr) typ ≈ 75 ns @ IF = 40 A, di/dt = 200 A/µs (max ≈ 112 ns) Reverse recovery charge (Qrr) ~300 – 450 nC (@ 25 °C) Applications Induction Heating (IH) systems Uninterruptible Power Supplies (UPS) AC and DC motor drives / motor controllers General-purpose inverters and power converters High-power switching stages where a 1200 V device is required. DataSheet FGL40N120AND

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