IRFP9140N P-Channel MOSFET Transistor 100V 0.117Ω 23A TO-247AC
EGP 55
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IRFP9140N P-Channel MOSFET Transistor 100V 0.117Ω 23A TO-247AC The IRFP9140N is a Fifth Generation HEXFET® Power MOSFET . This P-Channel device utilizes advanced processing techniques to achieve an extremely low on-resistance per silicon area . This design combines the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are known for, providing designers with an extremely efficient and reliable component . Features Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Extremely low on-resistance per silicon area Ruggedized device design Applications This device is designed for use in a wide variety of applications . It is particularly well-suited for commercial-industrial applications where higher power levels are necessary and preclude the use of smaller packages like the TO-220. DataSheet IRFP9140N
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