IRF1407PBF N-Channel Power MOSFET Transistor 130A-75V-7.8mΩ TO-220

Description

IRF1407PBF N-Channel Power MOSFET Transistor 130A-75V-7.8mΩ TO-220 The IRF1407PBF is a high-current N-channel HEXFET® power MOSFET offered in the through-hole TO-220AB package, engineered for aggressive power switching where very low on-resistance and high avalanche robustness are required. Built with an advanced stripe-planar process, it delivers extremely low RDS(on) per silicon area so designers can minimize conduction losses in high-current paths. The device’s TO-220 form factor makes it easy to mount on heatsinks or PCBs for effective thermal management. Electrically the IRF1407PBF is specified for automotive and industrial use: a 75 V drain-to-source rating with a continuous drain current capability up to 130 A (TC = 25 °C) and pulse capability much higher, while supporting a maximum junction temperature up to 175 °C. Fast switching, low charge and improved repetitive avalanche ratings make it suitable where both dynamic and steady-state efficiency matter. Thermal and mechanical details (lead assignments, mounting dimensions, tab geometry) are documented for reliable assembly. In practice the IRF1407PBF is chosen for high-power DC-DC stages, motor drive and automotive power distribution where low losses, rugged avalanche tolerance and good thermal coupling are essential. The combination of ultra-low RDS(on), high current rating and TO-220 usability provides a balance between performance and simple mechanical mounting for prototypes and production boards. Features: 75 V drain-to-source breakdown voltage rating. Ultra low static on-resistance RDS(on) = 0.0078 Ω (max). High continuous drain current capability – 130 A (TC = 25 °C). High pulse drain current capability (IDM up to 520 A). 175 °C maximum junction operating temperature. Fast switching characteristics and moderate total gate charge. Improved repetitive avalanche rating and robust EAS single-pulse energy. TO-220AB (HEXFET) package for straightforward heatsinking and mounting. Specifications: Parameter: Value: Device: IRF1407PBF. VDS (Drain-Source Voltage): 75 V. RDS(on) (Static On-Resistance): 0.0078 Ω (max) @ VGS = 10 V, ID = 78 A. ID (Continuous Drain Current): 130 A @ TC = 25 °C; 92 A @ TC = 100 °C. IDM (Pulsed Drain Current): 520 A (pulse). PD (Power Dissipation): 330 W @ TC = 25 °C. Linear derating factor: 2.2 W/°C. VGS (Gate-Source Voltage): ±20 V (max). VGS(th) (Gate Threshold): 2.0 V (min) – 4.0 V (max) (ID = 250 µA). gfs (Forward Transconductance): Typical 74 S (VDS = 25 V, ID = 78 A). EAS (Single Pulse Avalanche Energy): 390 mJ. Thermal resistance RθJC / RθJA: RθJC 0.45 °C/W; RθCS 0.50 °C/W; RθJA ≈ 62 °C/W. TJ (Operating Junction Temp): -55 °C to +175 °C. Storage Temperature (TSTG): -55 °C to +175 °C. Qg / Qgs / Qgd (Gate Charge): Qg 160 nC – Qg max 250 nC; Qgs typ 35 nC; Qgd typ 54 nC. Ciss / Coss / Crss (Capacitances): Ciss 5600 pF; Coss variants shown (see datasheet figures). Diode forward voltage (VSD): Up to ~1.3 V @ IS = 78 A. Reverse recovery (trr / Qrr): trr 110 ns; Qrr 390 nC (conditions listed in datasheet). Package / Lead assignments: TO-220AB (HEXFET). Leads: 1-Gate, 2-Drain, 3-Source, 4-Drain (tab). Pinout Diagram: Applications: Integrated starter-alternator systems. 42 V automotive electrical systems. High-current DC-DC converters and power distribution. Motor drivers and automotive power stages. Battery protection and load switching. General purpose high-current power switching. Package Contents: 1x IRF1407PBF N-Channel Power MOSFET Transistor 130A-75V-7.8mΩ TO-220 Datasheet

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