IRFP054 N-Channel MOSFET 60V 70A TO-247AC

Description

IRFP054 N-Channel MOSFET 60V 70A TO-247AC The IRFP054 is a robust N-channel power MOSFET designed for high-current and high-efficiency switching applications. It features low on-resistance and fast switching characteristics, making it ideal for reducing conduction losses and improving overall system performance in power circuits. This MOSFET is widely used in applications such as motor drivers, power supplies, and inverters. Its TO-247AC package allows for effective heat dissipation, enabling reliable operation under high load conditions. The device is suitable for both low-frequency and high-frequency switching designs, offering flexibility for various industrial and consumer electronics applications. Features: N-channel enhancement mode MOSFET. Low on-resistance. Fast switching capability. High current handling capability. High efficiency operation. Good thermal performance. Suitable for high-power applications. Rugged and reliable design. Specifications: Parameter Symbol Min. Typ. Max. Unit Test Condition Drain‑Source Breakdown Voltage V(BR)DSS 60 – – V VGS=0V, ID=250µA Gate Threshold Voltage VGS(th) 2.0 – 4.0 V VDS=VGS, ID=250µA Static Drain‑Source On‑Resistance RDS(on) – – 0.014 Ω VGS=10V, ID=54A Forward Transconductance gfs 25 – – S VDS=25V, ID=54A Drain‑Source Leakage Current IDSS – – 25 µA VDS=60V, VGS=0V Drain‑Source Leakage (150°C) IDSS – – 250 µA VDS=48V, VGS=0V, TJ=150°C Gate‑Source Leakage (Forward) IGSS – – 100 nA VGS=20V Gate‑Source Leakage (Reverse) IGSS – – -100 nA VGS=-20V Total Gate Charge Qg – – 160 nC ID=64A, VDS=48V, VGS=10V Gate‑Source Charge Qgs – – 48 nC Same as above Gate‑Drain Charge (Miller) Qgd – – 54 nC Same as above Turn‑On Delay Time td(on) – 20 – ns VDD=30V, ID=64A, RG=6.2Ω Rise Time tr – 160 – ns Same as above Turn‑Off Delay Time td(off) – 83 – ns Same as above Fall Time tf – 150 – ns Same as above Input Capacitance Ciss – 4500 – pF VDS=25V, f=1MHz Output Capacitance Coss – 2000 – pF Same as above Reverse Transfer Capacitance Crss – 300 – pF Same as above Diode Forward Voltage VSD – – 2.5 V IS=90A, VGS=0V, TJ=25°C Reverse Recovery Time trr – 270 540 ns IF=64A, di/dt=100A/µs Reverse Recovery Charge Qrr – 1.1 2.2 µC Same as above Internal Drain Inductance LD – 5.0 – nH Between lead and die Internal Source Inductance LS – 13 – nH Same as above Junction‑to‑Case Thermal Resistance RθJC – – 1.5 °C/W Steady state Pinout: Footprint: Applications: Switch mode power supplies (SMPS). Motor control circuits. DC-DC converters. Power inverters. Battery management systems. High-current switching applications. Industrial power control systems. Package Included: 1x IRFP054 N-Channel MOSFET 60V 70A TO-247AC. Documents: IRFP054 Datasheet .

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