IRF450 N-Channel MOSFET Transistor 500V 13A TO-3

Description

IRF450 N-Channel MOSFET Transistor 500V 13A TO-3 The IRF450 is a through-hole, TO-3 (TO-204AA) packaged, high-voltage N-channel power MOSFET built on HEXFET/Hermetic technology for demanding power applications. It is designed to handle high drain-to-source voltages while providing relatively low on-resistance for its class. The TO-3 metal can/package and rugged construction give excellent thermal coupling and avalanche/dv/dt robustness, making the device suitable for high-energy pulses, switching power supplies, motor controllers, and audio output stages where both high voltage and reliable power handling are required. The device is often used where a hermetic, high-voltage discrete is preferred over modern surface packages. Features: High voltage, rugged MOSFET construction (hermetic/TO-3 option). Low input capacitance for faster switching. Robust avalanche and dv/dt capability (good inductive load performance). Easy paralleling for increased current handling. Simple gate drive requirements (standard MOSFET drive). Extended safe-operating-area (SOA) characteristics. Specifications: Parameter Value Drain-Source Voltage: 500V Continuous Drain Current: 13A Drain-Source On Resistance: 0.4Ω Gate Threshold Voltage: 2 – 4V Maximum Gate-Source Voltage: ±20V Total Gate Charge: 120nC Package: TO-3 Channel Type: N-Channel Pinout: Pin / Case Function Case (Metal Body) Drain Pin 1 Source Pin 2 Gate Applications: Switching power supplies. Motor drives and motor controllers. High-voltage DC switching circuits. Audio power amplifiers. Industrial power control systems. Packages: 1x IRF450 N-Channel MOSFET Transistor 500V 13A TO-3. Documents: IRF450 Datasheet

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