2SK903 N-Channel Power MOSFET Transistor 800V 3A TO-220F

Description

2SK903 N-Channel Power MOSFET Transistor 800V 3A TO-220F The 2SK903 is an N-channel enhancement-mode power MOSFET engineered by Fuji Electric for high-voltage switching applications. Utilizing advanced silicon technology, it features a vertical DMOS structure that ensures efficient current handling and thermal stability. Its construction prioritizes reliability in demanding environments, with an isolation design that minimizes parasitic effects. Designed to operate at up to 800V drain-source voltage, the 2SK903 delivers robust performance with a continuous drain current of 3A (12A pulsed). It exhibits low on-state resistance ( RDS(on) R D S ( o n ) ​ ) of 4Ω (typical) at 10V gate drive, reducing conduction losses. Fast switching characteristics turn-on/off times under 250ns enable high-efficiency power conversion and minimal heat generation. Housed in a TO-220F package, the 2SK903 optimizes thermal dissipation via a direct heatsink mounting interface. This compact form factor supports automated assembly while ensuring mechanical durability. The integrated body diode provides reverse recovery protection, enhancing system safety in inductive load scenarios. Features: N-channel enhancement-mode MOSFET. 800V high drain-source voltage capability. Low gate threshold voltage ( VGS(th) V GS ( t h ) ​ ): 3V typical. Fast switching performance (turn-on/off < 250ns). Low on-state resistance ( RDS(on) R D S ( o n ) ​ : 4Ω typical). Integrated reverse recovery diode. Low input/output capacitance. TO-220F package for efficient thermal management. Robust operating temperature range (-55°C to +150°C). Specifications: Parameter Symbol Min Typ Max Unit Conditions Drain-Source Voltage VDS V D S ​ – – 800 V Gate-Source Voltage VGS V GS ​ -20 – +20 V Continuous Drain Current ID I D ​ – – 3 A Tc=25°C T c ​ = 25° C Pulsed Drain Current ID pulse I D p u l se ​ – – 12 A On-State Resistance RDS(on) R D S ( o n ) ​ – 4.0 – Ω ID=1.5A,VGS=10V I D ​ = 1.5 A , V GS ​ = 10 V Gate Threshold Voltage VGS(th) V GS ( t h ) ​ 2.1 3.0 4.0 V ID=10mA,VDS=VGS I D ​ = 10 m A , V D S ​ = V GS ​ Turn-Off Delay Time td(off) t d ( o ff ) ​ – – 250 ns VDD=30V,ID=2.1A V DD ​ = 30 V , I D ​ = 2.1 A Input Capacitance Ciss Ciss​ – 1400 – pF VDS=25V,f=1MHz V D S ​ = 25 V , f = 1 M Hz Thermal Resistance RthJC RthJC​ – – 3.125 °C/W Junction-to-case Applications: Switch-Mode Power Supplies (SMPS). Motor Drive Controllers. High-Voltage Inverters. Industrial Switching Systems. Electronic Ballasts. DC-DC Converters. Package Contents: 1x 2SK903 N-Channel Power MOSFET Transistor 800V 3A TO-220F 2SK903 Datasheet

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