BDW93C NPN Darlington Transistor 12A 100V TO-220

Description

BDW93C NPN Darlington Transistor 12A 100V TO-220 The BDW93C is a robust silicon power transistor engineered using an Epitaxial-Base NPN process and configured in a monolithic Darlington arrangement. This design integrates two transistors into a single device, resulting in a component capable of delivering very high current gain. It is specifically intended for demanding roles in both power linear amplification and high-speed switching circuits, making it a versatile solution for controlling significant power levels in industrial environments. The transistor is constructed in a monolithic Darlington configuration, which internally pairs two bipolar transistors to multiply the current gain, allowing a small base current to control a much larger collector current. This entire assembly is securely housed in a industry-standard Jedec TO-220 plastic package. This package is renowned for its mechanical durability and excellent thermal performance, facilitating easy mounting to a heat sink to manage the substantial power dissipation during operation. A key feature of its design is the integration of an antiparallel collector-emitter diode within the same monolithic structure. This internal diode provides inherent protection against voltage spikes in inductive load applications. Furthermore, the BDW93C is offered as part of a complementary pair, with the BDW94C serving as its direct PNP counterpart, which simplifies the design of push-pull output stages and other symmetrical circuits. Features: Monolithic Darlington configuration. Integrated antiparallel collector-emitter diode. Complementary PNP – NPN devices available. STMicroelectronics PREFERRED SALESTYPES. Specifications: Parameter Value Condition Unit Collector-Emitter Voltage: 100 IB = 0 V Collector-Base Voltage: 100 IE = 0 V Collector Current: 12 A Peak Collector Current: 15 A Base Current: 0.2 A Total Power Dissipation: 80 Tcase ≤ 25°C W DC Current Gain: 1000 (Min) IC = 5 A, VCE = 4 V Collector-Emitter Saturation Voltage: 2.5 (Max) IC = 10 A, IB = 100 mA V Base-Emitter Saturation Voltage: 2.5 (Max) IC = 10 A, IB = 100 mA V Thermal Resistance, Junction to Case: 1.56 °C/W Operating Junction Temperature: 150 °C Pinout Diagram: Footprint Diagram: Applications: Linear Industrial Equipment. Switching Industrial Equipment. Package Contents: 1x BDW93C NPN Darlington Transistor 12A 100V TO-220 Datasheet

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