2SK3562 N-Channel MOSFET Transistor 600V 6A TO-220F

Description

2SK3562 N-Channel MOSFET Transistor 600V 6A TO-220F The 2SK3562 is a high-performance, silicon N-channel MOS field-effect transistor ( π-MOSVI ) . Designed primarily for enhancement-mode operation, it excels in switching regulator applications . This electrostatic-sensitive device offers extremely low leakage current and high speed, housed in a lead (Pb)-free, high-reliability package . Features Low On-Resistance High Forward Transfer Admittance Low Leakage Current Enhancement Mode Specifications Absolute Maximum Ratings ( Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V DSS 600 V Drain-gate voltage ( R GS = 20 kΩ) V DGR 600 V Gate-source voltage V GSS ±30 V Drain current (DC) (Note 1) I D 6 A Drain current (Pulse, t = 1 ms) (Note 1) I DP 24 A Drain power dissipation ( T c = 25°C) P D 40 W Single pulse avalanche energy (Note 2) E AS 345 mJ Avalanche current I AR 6 A Repetitive avalanche energy (Note 3) E AR 4 mJ Channel temperature T ch 150 °C Storage temperature range T stg -55 to 150 °C Electrical Characteristics ( Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±25 V, V DS = 0 V — — ±10 μA Gate-source breakdown voltage V (BR)GSS I G = ±10 μA, V DS = 0 V ±30 — — V Drain cut-off current I DSS V DS = 600 V, V GS = 0 V — — 100 μA Drain-source breakdown voltage V (BR)DSS I D = 10 mA, V GS = 0 V 600 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 — 4.0 V Drain-source ON resistance R DS(ON) V GS = 10 V, I D = 3 A — 0.9 1.25 Ω Forward transfer admittance |Y fs | V DS = 10 V, I D = 3 A 1.2 5.0 — S Input capacitance C iss V DS = 25 V, V GS = 0 V, f = 1 MHz — 1050 — pF Reverse transfer capacitance C rss — 10 — pF Output capacitance C oss — 110 — pF Rise time t r See test circuit in datasheet I D = 3 A, V GS = 0 to 10 V, R L = 66 Ω, V DD ≈ 200 V — 20 — ns Turn-on time t on — 40 — ns Fall time t f — 35 — ns Turn-off time t off — 130 — ns Total gate charge Q g V DD ≈ 400 V, V GS = 10 V, I D = 6 A — 28 — nC Gate-source charge Q gs — 16 — nC Gate-drain charge Q gd — 12 — nC Source-Drain Ratings and Characteristics ( Ta = 25°C) Characteristic Symbol Test Condition Typ. Max Unit Continuous drain reverse current (Note 1) I DR — — 6 A Pulse drain reverse current (Note 1) I DRP — — 24 A Forward voltage (diode) V DSF I DR = 6 A, V GS = 0 V — -1.7 V Reverse recovery time t rr I DR = 6 A, V GS = 0 V, dI DR /dt = 100 A/μs 1000 — ns Reverse recovery charge Q rr 7.0 — μC Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R th(ch-c) 3.125 °C/W Thermal resistance, channel to ambient R th(ch-a) 62.5 °C/W Applications Switching Regulators General Electronics Applications Package Content 1 x 2SK3562 N-Channel MOSFET Transistor 600V 6A TO-220F DataSheet 2SK3562

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